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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Improved Silicon Drift Detector Coincidence Rejection for Digital Pulse Processors

    SBC: 4pi Analysis, Inc.            Topic: N/A

    The recent emergence of the Silicon Drift detector (SDD), for use in Energy Dispersive x-ray Spectroscopy (EDS), has made possible x-ray event streams with input count rates in the range of 1-10 Mcps. Modern digital pulse processors are therefore required to run at fast time constants to achieve reasonable throughput; however, this causes significant coincidence artifacts to appear in the spectrum ...

    SBIR Phase I 2008 Department of CommerceNational Institute of Standards and Technology
  2. Extended Refreshable Tactile Graphic Display (with Linear Actuation Array)

    SBC: E L I A Life Technology Inc            Topic: N/A

    New innovative technology for the visually impaired has been developed by NIST. If commercialized, it would provide refreshable tactile graphical information to the visually impaired, enabling them to compete on a more equal footing in the workplace and the education system.

    SBIR Phase I 2008 Department of CommerceNational Institute of Standards and Technology
  3. RBAC-Based Workflow

    SBC: Virtual Globe, Inc. (Rockwise)            Topic: N/A

    Under this proposal, Virtual Global, Inc. proposes to work with NIST to develop RBAC-BASED WORKFLOW, a workflow system that will use RBAC in a web services model as a form of middleware that can be "packaged" accessed, configured, and reused by integrating with existing trusted RBAC implementations.

    SBIR Phase I 2008 Department of CommerceNational Institute of Standards and Technology
  4. Innovative Fire Measurements Using Thermal Imaging

    SBC: CRITICAL IMAGING, LLC            Topic: N/A

    The most practical arrangement for investigating moving fires within a restricted space is to use a high- resolution stand off technique. One such method that fits this description is the use of a staring infrared (IR) sensing device (i.e. imager).

    SBIR Phase I 2008 Department of CommerceNational Institute of Standards and Technology
  5. Advanced Radar Data Fusion- Multiple Input Multiple Output Sensor Acquisition (MIMOSA) System

    SBC: Andro Computational Solutions LLC            Topic: MDA06T003

    Radar targets provide a rich scattering environment that produces from 5-25 dB target fluctuations. The spatial dependence of target scattering means that targets produce essentially independent scattering returns when radiated from sufficiently different directions. Thus, if receivers are distributed over a wide enough area, which is the premise of the multiple input multiple output (MIMO) radar ...

    STTR Phase II 2008 Department of DefenseMissile Defense Agency
  6. Development of Seeded Crystal Growth Processes for Large Area Semi-insulating Gallium Nitride Substrates

    SBC: KYMA TECHNOLOGIES, INC.            Topic: MDA06035

    In this Phase II effort, Kyma will explore aspects of seeded bulk GaN crystal growth to develop manufacturing processes for large area, high quality, semi-insulating GaN substrates for RF applications. Optimization of several aspects of the growth process will be investigated to develop a process for high quality regrowth addressing known issues identified in the Phase I effort. Growth optimizati ...

    SBIR Phase II 2008 Department of DefenseMissile Defense Agency
  7. Integration of Bulk GaN with Diamond for Device-level Thermal Management Solutions

    SBC: KYMA TECHNOLOGIES, INC.            Topic: MDA07034

    In this Phase I proposal, Kyma Technologies will perform a proof of concept demonstration of high quality bulk GaN/diamond integration for advanced thermal management of high power density GaN-based device applications. The development effort will include separation of thin GaN layers from bulk substrates and bonding to diamond.

    SBIR Phase I 2008 Department of DefenseMissile Defense Agency
  8. Novel HEMT based on GaN on Diamond for High Power Amplifiers

    SBC: Nitronex Corporation            Topic: MDA07034

    GaN based HEMTs are capable of achieving high power density at high frequency. Thus, solid-state high power amplifiers based on GaN will be smaller and lighter than incumbent technology. The use of a silicon substrate for GaN HEMTs provides a reliable GaN device which is also economical. MMICs based GaN on Si are ideally suited for applications in X-band radar systems that are part of the ballisti ...

    SBIR Phase I 2008 Department of DefenseMissile Defense Agency
  9. AlGaN/GaN HFETs on Silicon for BMDS X-Band Radars

    SBC: Nitronex Corporation            Topic: MDA06T012

    AlGaN/GaN FETs on Si will be developed and optimized for operation at high frequency (X-band and above). The high frequency performance will be improved by modifications to the existing commercialized sub-4GHz GaN FET platform technology that’s currently available at Nitronex. The modifications will be made in the epitaxial structure, device layout and gate length for maximum X-band radar perf ...

    STTR Phase II 2008 Department of DefenseMissile Defense Agency
  10. Moded Configuration Management and Validation

    SBC: ORIELLE, LLC            Topic: MDA07040

    We propose to develop Open Service Gateway Initiative (OSGi) enhancements for configuration management and validation to enable assured switching between operational and test modes. We will design a moded configuration management and validation suite that extends public-domain OSGi implementations with capabilities for trusted bundles, XML-based device inventories, and mode switching and configura ...

    SBIR Phase I 2008 Department of DefenseMissile Defense Agency

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