Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Construction of a Force Probe for Characterization of Microscale Features

    SBC: INSITUTEC, INC.            Topic: N/A

    The pressing need exists within industry to accurately measure high aspect ratio microscale structures. For example, diesel injector nozzles are manufactured with microscale holes ranging from 50-200 micrometers in diameter and 3-5 mm depths. One fundamental challenge is to nondestrucvely measure these features in order to validate models, enhance manufacturing processes, and reduce fuel emissions ...

    SBIR Phase I 2005 Department of CommerceNational Institute of Standards and Technology
  2. Handheld Photoacoustic Chemical Agent and Toxic Industrial Material Detector

    SBC: MANNING APPLIED TECHNOLOGY            Topic: CBD05112

    Manning Applied Technology proposes to develop a handheld infrared spectrometer, ideally suited to detection of airborne chemical agents at and below permissible exposure limits. This approach offers unmatched sensitivity and specificity for detection of all types of chemical vapors. The instrument is modular, rugged, compact and highly sensitive. Volume pricing will be less than $1000 each. ...

    SBIR Phase I 2005 Department of DefenseOffice for Chemical and Biological Defense
  3. Unstructured Fixed Grid with Moving Body, Navier-Stokes Computational Fluid Dynamic (CFD) Solver for Simulating Gas Flows

    SBC: Corvid Technologies LLC            Topic: MDA04136

    The development of a generalized moving body capability for Computational Fluid Dynamics (CFD) flow simulations of highly transient flowfields is critical to system analyses of Divert and Attitude Control Systems (DACS) for Kinetic Warheads (KWs). Testing capabilities are limited in the DACS operating regime; therefore, computational tools are essential for such analyses. The flow in the DACS its ...

    SBIR Phase I 2005 Department of DefenseMissile Defense Agency
  4. Tool Condition Monitoring and Diagnostics

    SBC: VulcanCraft            Topic: N/A

    A smart machine tool must be able to monitor its condition and report problems. Every CNC machine should provide an alarm for tool condition problems, including tool wear, much as every automobile has a low oil indicator. Tool wear is particularly important for unattended machining as a worn tool can ruin a part. All current tool condition systems operate "blind" without direct information on curr ...

    SBIR Phase I 2003 Department of CommerceNational Institute of Standards and Technology
  5. AlN single crystals for photonic applications

    SBC: HEXATECH            Topic: N/A

    The objective of proposed work is to demonstrate that AlN single crystals are suitable for nonlinear optical (NLO) and electro-optic (EO) applications in the visible and UV spectral ranges. AlN is a promising material for photonic applications that requireUV-compatibility, mechanical, chemical and optical robustness, as well as radiation hardness. As a non-centrosymmetric material, AlN has a 2nd o ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  6. Growth of GaN single crystals (BMD002-014A)

    SBC: HEXATECH            Topic: N/A

    Through the proposed research, we plan to demonstrate the feasibility of the ammonothermal growth method for commercial production of high quality GaN crystals. This will be achieved by fabrication of a classical autoclave especially designed for thisprocess, demonstration of adequate solubility, and demonstration of transport and re-deposition of the material on GaN seeds. The ammonothermal cry ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  7. Advanced Gallium Nitride Microelectronic Devices Produced on Gallium Nitride Substrates

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    This program will demonstrate high-performance GaN microelectronic devices for X-band radar applications by using novel device designs and single crystal gallium nitride substrates. FETs for power amplifiers will benefit from lower defects resulting fromgrowth on a native GaN substrate, improved device design, including features such as gate recess and passivation layers, and device cooling. The m ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  8. Manufacturng Process for Production of Doped GaN Crystals

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Kyma Technologies will use its proprietary manufacturing technique for growth of bulk GaN doped substrates. We propose to develop gallium nitride (GaN) substrates with n- and p- type dopants for device fabrication. Attempts to grow low defect densitygallium nitride (GaN) thin films on substrates such as sapphire and silicon carbide (SiC) have had limited success. As such, homoepitaxial GaN thin ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  9. Advanced Manufacturing Process for Growth of Gallium Nitride Crystals

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Gallium nitride crystal growth has gained more attention as the need for a homoepitaxial substrate for GaN devices has increased. Kyma Technologies proposes to develop an advanced manufacturing process capable of growing single crystal GaN at growth ratesin excess of 1mm/hr. 50mm single crystal GaN substrates produced by Kyma Technologies will be used as the seed material to ensure thermal and l ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  10. Gallium Nitride Devices on Semi-insulating Gallium Nitride Substrates for Advanced T/R Modules

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Existing T/R modules are based on gallium arsenide (GaAs) transistors and power amplifiers. Current and future XBRs would benefit from improved resolution, enhanced discrimination, and increased power. Significant XBR performance enhancement can beachieved by developing T/R modules that incorporate gallium nitride (GaN) -based power amplifiers. High-performance GaN-based devices, such as HEMTs, h ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
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