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The Award database is continually updated throughout the year. As a result, data for the given year is not complete until April of the following year. Annual Reports data is a snapshot of agency reported information for that year and hence might look different from the live data in the Awards Information charts.

  1. Vertical GaN transistors on bulk GaN substrates

    SBC: Avogy            Topic: 1

    In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide operating temperature range (-55 to 150°C). The target specific on-resistance for the transistor is 30x low ...

    SBIR Phase I 2013 Department of EnergyARPA-E
  2. Vertical GaN transistors on bulk GaN substrates

    SBC: Avogy            Topic: 1

    In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide operating temperature range (-55 to 150°C). The target specific on-resistance for the transistor is 30x low ...

    SBIR Phase II 2013 Department of EnergyARPA-E

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