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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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High Power III-Nitride Heterojunction Field-Effect Effect Transistor Development
SBC: III-N Technology, Inc Topic: N/AThe research proposed here is built on the recent successful fabrication of metal oxide semiconductor heterjunction field effect transistors (MOS-HFETs) based on AlGaN/GaN heterostructures with very high drain-current-driving and gate-control capabilitiesas well as unprecedented high breakdown voltages by the P.I.s research group at Kansas State University. III-nitride HFETs have great promises i ...
SBIR Phase I 2003 Department of DefenseMissile Defense Agency -
Novel Spacecraft Separation System
SBC: TAI-YANG RESEARCH COMPANY Topic: N/ATai-Yang Research proposes a novel and revolutionary approach to spacecraft separation. The proposed approach is 100 % contamination free and provides an unlimited number of in-situ rest capability. This revolutionary approach provides a completely uniformand adjustable clamping force. When implemented, the proposed approach will provide a safe, low cost, lightweight, and reliable method of spacec ...
SBIR Phase I 2003 Department of DefenseMissile Defense Agency
