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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. High Power III-Nitride Heterojunction Field-Effect Effect Transistor Development

    SBC: III-N Technology, Inc            Topic: N/A

    The research proposed here is built on the recent successful fabrication of metal oxide semiconductor heterjunction field effect transistors (MOS-HFETs) based on AlGaN/GaN heterostructures with very high drain-current-driving and gate-control capabilitiesas well as unprecedented high breakdown voltages by the P.I.s research group at Kansas State University. III-nitride HFETs have great promises i ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  2. Bulk Growth of Aluminum Nitride

    SBC: CERMET, INC.            Topic: N/A

    The primary goal of Phase II will be to scale up the size of AlN single crystals and begin pilot production of crystals up to 2 inches in diameter using Cermet's physical vapor transport method. Cermet will employ a novel, proprietary crucible techniqueto allow the production of Al and AlN vapor with no contamination from the crucible. The vapor will then be deposited onto a seed in a nitrogen c ...

    SBIR Phase II 2003 Department of DefenseMissile Defense Agency
  3. High Power, Modulation Doped AlGaN/GaN FETs

    SBC: CERMET, INC.            Topic: N/A

    Two major opportunities are outlined in the proposed Phase II work. The first opportunity is the demonstration of doped ZnO bulk crystal growth with specific electrical properties. The second opportunity is the growth of nitride heterostructures on thesesubstrates. High quality, doped ZnO bulk substrates of 50mm diameter will be made possible with Cermet's proven crystal growth technology. The gro ...

    STTR Phase I 2003 Department of DefenseMissile Defense Agency
  4. Bulk Growth of Gallium Nitride Single Crystal Boules

    SBC: CERMET, INC.            Topic: N/A

    The primary goal of Phase I will be to demonstrate the feasibility of growing high quality 5-mm thick boules of GaN single crystal using the physical vapor transport method. Cermet will employ a novel, proprietary technique to enable the production of agallium-containing vapor. The vapor will then be crystallized on a seed in a nitrogen-containing atmosphere in the form of GaN boules. Crystals ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  5. High Power, Modulation Doped AlGaN/GaN FETs

    SBC: CERMET, INC.            Topic: N/A

    Two major opportunities are outlined in the proposed Phase II work. The first opportunity is the demonstration of doped ZnO bulk crystal growth with specific electrical properties. The second opportunity is the growth of nitride heterostructures on thesesubstrates. High quality, doped ZnO bulk substrates of 50mm diameter will be made possible with Cermet's proven crystal growth technology. The gro ...

    STTR Phase II 2003 Department of DefenseMissile Defense Agency
  6. Scaleable Process for Integrated, High Frequency Capacitors

    SBC: Engi-Mat Co.            Topic: N/A

    Stimulated by the explosive growth in the electronics and telecommunication industries, there is an accelerated demand for high permittivity, thin film capacitors with reduced size for high frequency applications including signal decoupling, filtering, andimpedance matching. Ferroelectric films have outstanding dielectric properties that make them suited for a wide range of capacitor applications ...

    SBIR Phase II 2003 Department of DefenseMissile Defense Agency
  7. FREQUENCY AGILE DEVICES USING FERROELECTRIC MATERIALS

    SBC: Engi-Mat Co.            Topic: N/A

    MCT PROPOSES TO USE FERROELECTRIC BARIUM STRONTIUM TITANATE (BST) THIN FILMS TO DESIGN MONOLITHIC FREQUENCY-AGILE MICROWAVE BANDPASS FILTERS THAT CAN BE DYNAMICALLY ADJUSTED IN FREQUENCY BY THE APPLICATION OF A DC VOLTAGE. THIS ENABLES SYSTEMS THATOPERATE AT MULTIPLE FREQUENCY BANDS THROUGH SOFTWARE PROGRAMMING ONLY. IN ADDITION TO FREQUENCY-AGILE FILTERS, MONOLITHIC PHASE SHIFTERS FOR RADAR APP ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  8. Ballistic Missile System Innovative Batteries

    SBC: Engi-Mat Co.            Topic: N/A

    The U.S. Missile Defense Agency requires high energy density batteries (500-900 Wh/L) for expendable space launch vehicle power applications. Lithium thionyl chloride battery chemistry provides very high energy densities to these applications due to thelight weight of lithium and thionyl chloride solvent (500-900 Wh/L). However, due to the reactive nature of thionyl chlorides, the buildup of lit ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  9. Non Destructive Examination of Solid Rocket Motor Propellant Using Induced Positron Technology

    SBC: POSITRON SYSTEMS, INC.            Topic: N/A

    Failure of solid rocket motor propellants due to structural or chemical breakdown from either manufacturing or aging effects can result in potential failure of the rocket and significant maintenance requirements. Defects in rocket propellants are asignificant issue particularly for new propellants, which may suffer from short experiential histories, frequently unknown lifecycle parameters and the ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  10. Data Driven Prognostics

    SBC: STAR            Topic: N/A

    Maintenance prognostics is concerned with the prediction of an abnormal operation (fault) within a system's component. The fault can be due to a breakdown of a part within the component, lack of syncronization internally or with other components, and soforth. Furthermore, being notified that a failure will occur when it is too late to prevent the failure is generally not of value. Thus, a progn ...

    STTR Phase I 2003 Department of DefenseMissile Defense Agency

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