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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. High Power III-Nitride Heterojunction Field-Effect Effect Transistor Development

    SBC: III-N Technology, Inc            Topic: N/A

    The research proposed here is built on the recent successful fabrication of metal oxide semiconductor heterjunction field effect transistors (MOS-HFETs) based on AlGaN/GaN heterostructures with very high drain-current-driving and gate-control capabilitiesas well as unprecedented high breakdown voltages by the P.I.s research group at Kansas State University. III-nitride HFETs have great promises i ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  2. Bulk Growth of Aluminum Nitride

    SBC: CERMET, INC.            Topic: N/A

    The primary goal of Phase II will be to scale up the size of AlN single crystals and begin pilot production of crystals up to 2 inches in diameter using Cermet's physical vapor transport method. Cermet will employ a novel, proprietary crucible techniqueto allow the production of Al and AlN vapor with no contamination from the crucible. The vapor will then be deposited onto a seed in a nitrogen c ...

    SBIR Phase II 2003 Department of DefenseMissile Defense Agency
  3. High Power, Modulation Doped AlGaN/GaN FETs

    SBC: CERMET, INC.            Topic: N/A

    Two major opportunities are outlined in the proposed Phase II work. The first opportunity is the demonstration of doped ZnO bulk crystal growth with specific electrical properties. The second opportunity is the growth of nitride heterostructures on thesesubstrates. High quality, doped ZnO bulk substrates of 50mm diameter will be made possible with Cermet's proven crystal growth technology. The gro ...

    STTR Phase I 2003 Department of DefenseMissile Defense Agency
  4. Bulk Growth of Gallium Nitride Single Crystal Boules

    SBC: CERMET, INC.            Topic: N/A

    The primary goal of Phase I will be to demonstrate the feasibility of growing high quality 5-mm thick boules of GaN single crystal using the physical vapor transport method. Cermet will employ a novel, proprietary technique to enable the production of agallium-containing vapor. The vapor will then be crystallized on a seed in a nitrogen-containing atmosphere in the form of GaN boules. Crystals ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  5. High Power, Modulation Doped AlGaN/GaN FETs

    SBC: CERMET, INC.            Topic: N/A

    Two major opportunities are outlined in the proposed Phase II work. The first opportunity is the demonstration of doped ZnO bulk crystal growth with specific electrical properties. The second opportunity is the growth of nitride heterostructures on thesesubstrates. High quality, doped ZnO bulk substrates of 50mm diameter will be made possible with Cermet's proven crystal growth technology. The gro ...

    STTR Phase II 2003 Department of DefenseMissile Defense Agency
  6. Closed-Cycle ElectriCOIL Technology

    SBC: CU AEROSPACE L.L.C.            Topic: N/A

    The primary objective of CU AerospaceOs Phase II engineering work will be to develop all-gas-phase closed-cycle electrically assisted chemical laser COIL (ElectriCOIL) technology. CU Aerospace (CUA) and the University of Illinois at Urbana-Champaign(UIUC) believe that this challenge can be surmounted with changes to gain generator research including 1) radically new, electrically driven O2(1D) ge ...

    SBIR Phase II 2003 Department of DefenseMissile Defense Agency
  7. Superlattice Materials for Very-Long Wavelength Infrared Detectors (VLWIR)

    SBC: EPIR TECHNOLOGIES INC            Topic: N/A

    The fabrication of large format, highly sensitive focal plane arrays (FPAs) sensing at very long wavelengths in the infrared region (VLWIR), i.e. beyond 15um, is highly desirable for the Air Force's space-based applications. Currently, only limited typesof arrays such as 256 X 256 Si:As are available in this spectral region. However, these extrinsic detectors suffer from several fundamental limita ...

    SBIR Phase II 2003 Department of DefenseMissile Defense Agency
  8. Multi-color VLWIR Focal Plane Array for Space Applications

    SBC: EPIR TECHNOLOGIES INC            Topic: N/A

    We propose here a new generation of two color superlattice-based VLWIR detectors. The objective will be achieved by combining the advantages of the molecular beam epitaxy(MBE) crystal growth technique, and band gap engineering of a superlattice structurewith reduced tunneling currents and accurate control of cut-off wavelengths. The proposed technology eliminates non-uniformity in the band gap of ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  9. Multi-color VLWIR Focal Plane Array

    SBC: EPIR TECHNOLOGIES INC            Topic: N/A

    Infrared focal plane arrays that are capable of simultaneously detecting more than one wavelength are critical for improved clutter rejection, target identification, and range. Future infrared systems applications would greatly benefit from multi-colorsensors by replacing the current DoD technology that uses separate focal plane arrays with different cutoff wavelengths. We propose to design and de ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  10. Innovative Manufacturing Processes

    SBC: INVENTEK CORP            Topic: N/A

    This SBIR provides an opportunity to reduce unit cost by 25% and improve reliability through production of thermal batteries by a continuous process. This process uses Inventek's ceramic fiber separator CFS to act as a carrier for the fabrication of thinthermal cells through a tunnel kiln. CFS fiber paper exhibits about 20 times greater strength than the standard pressed MgO pellet. Thin separato ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
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