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The research proposed here is built on the recent successful fabrication of metal oxide semiconductor heterjunction field effect transistors (MOS-HFETs) based on AlGaN/GaN heterostructures with very high drain-current-driving and gate-control capabilitiesas well as unprecedented high breakdown voltages by the P.I.s research group at Kansas State University. III-nitride HFETs have great promises i ...

This Small Business Innovation Research (SBIR) Phase II project will focus on the development of a commercial process for the growth of Neodymium Yttrium Vanadate (Nd: YVO4) single crystals for use in solid-state lasers. This research will generate the commercially viable conditions for growth of large boules of single crystals suitable for use in diode pumped solid-state lasers. The hydrothermal ...

This Small Business Innovation Research (SBIR)Phase I project will prove that homogeneous, low-loss TiO2 and YVO4 crystals can be produced via commercially viable hydro-thermal crystal growth processes. Recently, a program to grow homogeneous YVO4 and TiO2 birefringent crystals using hydro-thermal growth methods had preliminary results that indicate that these crystals can be grown in hydro-therma ...

The development of a process to produce bulk silicon carbide (SiC) boules with alternate crystallographic orientations, specifically the a-orientation, which is perpendicular to the normally-grown c-orientation crystal, offers significant improvements inthe SiC semiconductor electronic properties. Specifically, the electron mobility will increase by a factor of five for 4H-SiC, and the thermal co ...

Absence of low defect density large diameter (~100 mm) silicon carbide (SiC) wafers is a major barrier for the commercial production of SiC-based devices. Hence, the development of a process to produce large diameter bulk SiC boules with low defectdensity offers a significant impetus for the widespread commercialization of SiC-based devices. An approach that will simultaneously increase wafer di ...

We propose to increase the mobility of both n- and p-type GaN by applying tensile strain and fixing the strain by bonding to an appropriate heat sink material. Straining in other semiconductor materials is now recognized as a viable route to higherperformance. We have demonstrated in these systems how low-level strain (0.05%) can increase mobility by a factor of two. Increases were larger for p-ty ...

This Small Business Innovation Research (SBIR) Phase I propose to combine the technologies of silicon-on-insulator (SOI) manufacture with strain-inducing wafer bonding to produce Strained-Si On Insulator (SSOI) wafers. Silicon-based devices with silicon/germanium (Si/Ge) heterostructures have been extensively researched and this has lead to the discovery that tensile strained silicon exhibits s ...

This Small Business Innovation Research (SBIR) project will develop a highly accurate temperature measurement system that can be used in optimizing the growth of high brightness light emitting diodes for solid state lighting applications. This product does not currently exist due to technical difficulties in measuring the substrate or gallium nitride (GaN) epilayer in a region where they ab ...

NON-TECHNICAL SUMMARY: Agricultural spray equipment operators typically cannot monitor all nozzles along the boom. Clogged or malfunctioning nozzles produce undesirable spraying results. This project is designed to lead directly to a useful product, namely, a single-nozzle monitoring unit for agricultural spray applications. The monitoring capabilities of the system will allow more efficient, reli ...

NON-TECHNICAL SUMMARY: Agricultural spray equipment operators typically cannot monitor all nozzles along the boom. Clogged or malfunctioning nozzles produce undesirable spraying results. This project is designed to lead directly to a useful product, namely, a single-nozzle monitoring unit for agricultural spray applications. The monitoring capabilities of the system will allow more efficient, reli ...