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The Award database is continually updated throughout the year. As a result, data for the given year is not complete until April of the following year. Annual Reports data is a snapshot of agency reported information for that year and hence might look different from the live data in the Awards Information charts.

  1. High-quality, low-cost GaN single crystal substrates for high-power devices

    SBC: Fairfield Crystal Technology            Topic: DEFOA0000941

    The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key attributes of the proposed novel GaN growth technique (a bulk crystal growth technique) are: a high growth rate and an ability to achieve a superior crystal quality. The novel GaN crystal growth techn ...

    SBIR Phase II 2015 Department of EnergyARPA-E
  2. High-quality, low-cost GaN single crystal substrates for high-power devices

    SBC: Fairfield Crystal Technology            Topic: 1

    The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key attributes of the proposed novel GaN growth technique (a bulk crystal growth technique) are: a high growth rate and an ability to achieve a superior crystal quality. The novel GaN crystal growth techn ...

    SBIR Phase I 2013 Department of EnergyARPA-E

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