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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Ultra Narrowband Optical Parametric Oscillator

    SBC: Aculight Corporation            Topic: N/A

    Presently there are no broadly tenable, narrow linewidth souces that operate throughout the mid-infrared (mid-IR) region of the spectrum, from 1 to 5 microns. Traditional sources have very low spectral brightness (low power per unit spectral bandwidth). This proposal describes a novel approach to produce a source with very high spectral brightness, tunable over the range of 1.1 to 4.3 microns. ...

    SBIR Phase II 1998 Department of DefenseAir Force
  2. Solid State Seed Laser for COIL

    SBC: Aculight Corporation            Topic: N/A

    The Air Force Phillips Laboratory is seeking approaches for demonstrating frequency agile COIL (chemical oxygen iodine lasers) operating near 1.31 microns and at 10 kHz rep rates. Frequency conversion approaches must be capable of handling high average power levels, greater than 10 kWatts. Converting a COIL device to high peak powers will be necessary for frequency conversion. The approach prop ...

    SBIR Phase II 1998 Department of DefenseAir Force
  3. Advanced Diode Pumped Laser Packaging

    SBC: Aculight Corporation            Topic: N/A

    High power lasers are needed for many airborne applications. These lasers must be compact, reliable in high vibration environments, and must also have a low per unit cost. Aculight proposes to develop a high repetition rate laser with average power of 10-20 watts using novel packaging designs and manufacturing methods. When fully developed, this technology will provide flight-worthy lasers at a ...

    SBIR Phase I 1998 Department of DefenseAir Force
  4. High Brightness, Multi-Wavelength Semiconductor Lasers

    SBC: Aculight Corporation            Topic: N/A

    Improving the optical beam brightness of diode laser bars and optically pumped semiconductors is essential for many Air Force and commercial applications. In this proposed work Aculight will build and test a MIT/LL optical approach for decreasing the angular divergence of diode laser bars by a factor of at least 80. The MIT/LL approach will be implemented using Aculight's newly developed optical ...

    SBIR Phase I 1998 Department of DefenseAir Force
  5. Atmospheric Water Vapor Adsorption for Mars In Situ Resource Utilization

    SBC: Adroit Systems, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1998 National Aeronautics and Space Administration
  6. Interconnect Technology for High Temperature SiC Integrated Circuits

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices, contacts and interconnect materials, be ...

    SBIR Phase II 1998 Department of DefenseAir Force
  7. High Temperature III-V Nitride RF Electronics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The III-V nitrides, (Al, In, Ga)N, are promising materials for high temperature, high power and high frequency devices due to the wide bandgaps, high electron saturation velocity and high electronic mobility transistor (HEMT) structures available in this alloy system. These devices would find wide-spread commercial use as power amplifiers in base station transmitters for personal communications ...

    SBIR Phase II 1998 Department of DefenseAir Force
  8. HIGH TEMPERATURE INTEGRATED CAPACITORS

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Next generation power electronic systems for military aircraft will require capacitors with reliable performance at temperatures from -55 up to 300 degrees C and beyond for filters, power converters and other control circuitry. Thin film integrated passive devices with lower dissipation and electrical leakage will also be needed, especially at high frequencies. Thin films have inherently high bre ...

    SBIR Phase I 1998 Department of DefenseAir Force
  9. LOW DEFECT DENSITY GaN PHOTODIODE

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    GaN-based p-i-n photodiodes are in ideal choice for the Air Force's UV radiation measurements needs since these solid-state detectors are compact, light, and have low power consumption. However, current GaN photodiodes have much larger dark currents than expected. This Phase I program seeks to dramatically improve the current state of GaN photodiodes by employing low dislocation density epitaxia ...

    SBIR Phase I 1998 Department of DefenseAir Force
  10. Light Weight And Inexpensive Hydrogen Specific Sensors

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    N/A

    SBIR Phase II 1998 National Aeronautics and Space Administration
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