You are here
Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
-
Atmospheric Water Vapor Adsorption for Mars In Situ Resource Utilization
SBC: Adroit Systems, Inc. Topic: N/AN/A
SBIR Phase I 1998 National Aeronautics and Space Administration -
Modulation-Doped A1 GaN/Gan Heterostructures and Devices on Semi-Insulating SIC Substrates
SBC: Advanced Technologies/Laboratories Intl Topic: N/AThe need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for ...
SBIR Phase II 1998 Department of DefenseMissile Defense Agency -
Novel Polishing and Reactor Technologies for SiC Epitaxial Growth
SBC: Advanced Technologies/Laboratories Intl Topic: N/ACommercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ sur ...
SBIR Phase II 1998 Department of DefenseMissile Defense Agency -
Vandium Precursors for Semi-Insulating SiC Epilayers
SBC: Advanced Technologies/Laboratories Intl Topic: N/ASilicon carbide (SiC) is an ideal semiconductor material for high temperature, high frequency, and high power electronic devices. A SiC technology analogous to silicon - on -insulator (SOI) will be feasible if a suitable dopant precursor and epitaxial growth technique to produce semi-insulating SiC can be developed. Vanadium is an attractive dopant for the formation of semi-insulating SiC. In Phas ...
SBIR Phase I 1998 Department of DefenseMissile Defense Agency -
Radiation hard, nonvolatile, NRDO memory elements
SBC: Advanced Technologies/Laboratories Intl Topic: N/AMetal-ferroelectric-semiconductor field effect transistors (MFS-FETs) have a can be used as nonvolatile memory devices. The primary ferroelectric materials for these devices are perovskite oxides such as lead zirconium titanate (PZT) and strontium bismuth tantalate (SBT). These materials contain highly mobile elements (Pb and Bi) that can interact with silicon at process temperatures and lead to a ...
SBIR Phase I 1998 Department of DefenseMissile Defense Agency -
Light Weight And Inexpensive Hydrogen Specific Sensors
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase II 1998 National Aeronautics and Space Administration -
Microhotplate Based, Palladium-Coated Metal-Hydride Thin Film Hydrogen Sensor arrays
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase I 1998 National Aeronautics and Space Administration -
High Performance Thin Film Piezoelectric Materials
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase II 1998 National Aeronautics and Space Administration -
An Optical Fuel/Oxidizer Sensor For Zero-G Environments
SBC: ADVANCED TECHNOLOGIES GROUP, INC. Topic: N/AN/A
SBIR Phase II 1998 National Aeronautics and Space Administration -
A Software Tool for Industrial Engineering Process Analysis and Modeling
SBC: AET, Inc. Topic: N/AN/A
SBIR Phase I 1998 National Aeronautics and Space Administration