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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Low-Cost, Resin-Transfer-Molding Tooling and Manufacturing Systems
SBC: Cirrus Design Topic: N/AN/A
SBIR Phase I 1994 National Aeronautics and Space Administration -
Low-Cost, Electromagnetic Device for Natural-Laminar-Flow Airfoils in General Aviation Applications
SBC: Cirrus Design Topic: N/AN/A
SBIR Phase I 1994 National Aeronautics and Space Administration -
Aspheric Figure Metrology Using a Laser Unequal-Path Interferometer with Computer-Generated Holograms
SBC: Diffraction International Topic: N/AN/A
SBIR Phase I 1994 National Aeronautics and Space Administration -
Core Memory Replacement Using MRAM
SBC: NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC. Topic: N/AMagnetoresistive Random Access Memory (MRAM) provides a magnetic core memory replacement that is the ideal spacequalifiable memory. Core is no longer suited to space applications because of its large form factor, weight, low density and high power requirements. MRAM is a semiconductor based memory with all the attributes of core (nonvolatile, no wearout, fast R/W, inherently rad-hard, temperature ...
SBIR Phase I 1994 National Aeronautics and Space Administration -
Polarization-Sensitive, Thermal Imaging Sensors
SBC: PHYSICS INNOVATIONS, INC. Topic: N/AN/A
SBIR Phase II 1994 National Aeronautics and Space Administration -
Robotic Surrogate
SBC: Ross-Hime Designs Inc Topic: N/AN/A
SBIR Phase I 1994 National Aeronautics and Space Administration -
Solar-Blind, Aluminum-Gallium-Nitrogen, Ultraviolet Detector Arrays Deposited by Atomic Nitrogen Epitaxy
SBC: SVT ASSOCIATES INC Topic: N/AN/A
SBIR Phase I 1994 National Aeronautics and Space Administration -
Epitaxially Grown, Germanium, Junction Field-Effect Transistor for Cryogenic Detectors
SBC: TLC Precision Wafer Technology, Inc. Topic: N/AAn epitaxial grown Germanium - channel Junction Field Effect Transistor (Ge-JFET) is proposed to provide the most efficient, low noise cryogenically cooled detectors operating at 2 - 4¿K. Precisioned engineered lattice and doping epitaxial growth will eliminate material defects to allow the Germanium superior low temperature mobilities to be utilized in the most efficient cryogenic temperature ...
SBIR Phase I 1994 National Aeronautics and Space Administration