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The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for ...

Commercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ sur ...

Silicon carbide (SiC) is an ideal semiconductor material for high temperature, high frequency, and high power electronic devices. A SiC technology analogous to silicon - on -insulator (SOI) will be feasible if a suitable dopant precursor and epitaxial growth technique to produce semi-insulating SiC can be developed. Vanadium is an attractive dopant for the formation of semi-insulating SiC. In Phas ...

Metal-ferroelectric-semiconductor field effect transistors (MFS-FETs) have a can be used as nonvolatile memory devices. The primary ferroelectric materials for these devices are perovskite oxides such as lead zirconium titanate (PZT) and strontium bismuth tantalate (SBT). These materials contain highly mobile elements (Pb and Bi) that can interact with silicon at process temperatures and lead to a ...

This proposal aims to develop quantum-dot based nanophosphors, using cladded and doped nanocrystals. These high-efficiency and fast response (nanoseconds) phosphors will be utilized in Phase II for the fabrication of full color, flexible, flat panel displays and illuminators, utilizing self-assembly techniques. Doped nanocrystals have demonstrated enhanced photolurninescence (e.g. quantum efficie ...

SURVEILLANCE IN THE INFRA-RED PART OF THE ELECTROMAGNETIC SPECTRUM DEMANDS INNOVATIVE CONCEPTS TO DESIGN QUANTUM WELL (QW) DETECTORS FOR WAVELENGTH BEYOND 12 UM. THE REQUIREMENT FOR LOW TUNNELING CURRENT AND SUPERIOR TRANSPORT PROPERTIES MAKE InAs-In(x)Ga(1-x)Sb, A TYPE II SUPERLATTICE, A SUITABLE CANDIDATE FOR INFRA-RED APPLICATION. STRAIN INDUCED BAND GAP VARIATION AND WAVELENGTH CONTROLLABILITY ...

The newest generation of Field-Programmable Gate Arrays (FPGAs) have up to half a million logic gates, connectable in arbitrary ways by down-loading a binary configuration file. These FPGA's, coupled to CCD arrays and trained using evolutionary techniques, offer a new and powerful approach to high speed, compact image processing systems. The proposed Phase I effort will develop a robust, reconfigu ...

Most ion beam make use of nitrogen ion meams. Besides nitrogen other ion species may be required, inlcuding metal ion and mixed ion beams. Additinally, intensively investigated anywhere Ion-Beam Enhanced Deposition (IBED) techniques requires at least two ion sources and has restrictions for commercial application. The goal of this program is to improve ciritical surface parts of space and missi ...

The novel technique for metal (from Me^1+ to W^6+, Ta^6+) High-Power Ion Beam (HPIB) generation at accelerating voltages U=10-120 kV, ion currents I=5-20 kA, and pulse duration t=0.5-10 ¿s with the surface energy input dW=1-100 J/cm^2 will be designed during Phase I. In the reversed voltage mode such source generates an electron beam with currents I

There are many military, commercial, and medical applications for a small, rugged, and inexpensive infrared (IR) spectrometer. A Fourier Transform Infrared (FT-IR) spectrometer would be an ideal tool for such measurements; however, FT-IR spectrometers are very sensitive to vibration and subject to misalignment from mechanically or thermally induced forces. To help overcome these barriers, BMDO pro ...