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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. SOTERIA

    SBC: BIOMASON INC.            Topic: NA

    "Biomason’s proposed Soteria effort will eliminate key carbon incorporation elements within current biocement product production streams by: 1) urea substitution, 2) base aggregate mass carbon bundling, and 3) tuning of biocement speciation. In composite, these strategies will yield a carbon negative building material production strategy for cementitious materials that has the potential to suppl ...

    SBIR Phase I 2022 Department of EnergyARPA-E
  2. SOTERIA

    SBC: BIOMASON INC.            Topic: NA

    "Biomason’s proposed Soteria effort will eliminate key carbon incorporation elements within current biocement product production streams by: 1) urea substitution, 2) base aggregate mass carbon bundling, and 3) tuning of biocement speciation. In composite, these strategies will yield a carbon negative building material production strategy for cementitious materials that has the potential to suppl ...

    SBIR Phase II 2022 Department of EnergyARPA-E
  3. kV-class GaN-based Junction Barrier Schottky diodes using ion implantation

    SBC: ADROIT MATERIALS, INC.            Topic: T

    The objective of this work is to demonstrate GaN-based Junction Barrier Schottky (JBS) diodes using a novel ion implantation process developed in previously ARPA-E funded projects. The centerpiece of our proposed technology is selective area doping via implantation of Mg ions, which leverages our achievements in the ARPA-E PNDIODES program to push into commercial devices. The targeted application ...

    SBIR Phase I 2021 Department of EnergyARPA-E
  4. kV-class GaN-based Junction Barrier Schottky diodes using ion implantation

    SBC: ADROIT MATERIALS, INC.            Topic: T

    The objective of this work is to demonstrate GaN-based Junction Barrier Schottky (JBS) diodes using a novel ion implantation process developed in previously ARPA-E funded projects. The centerpiece of our proposed technology is selective area doping via implantation of Mg ions, which leverages our achievements in the ARPA-E PNDIODES program to push into commercial devices. The targeted application ...

    SBIR Phase II 2021 Department of EnergyARPA-E
  5. Ion implantation-enabled fabrication of AlN based Schottky diodes

    SBC: ADROIT MATERIALS, INC.            Topic: T

    The objective of this work is to develop AlN-based Schottky diodes with electrical properties that will drastically reduce forward conduction losses compared to existing high-power diodes. This objective is achieved through ion implantation of Si in AlN, which provides a shallow ntype dopant in the n+ contact layers. Sophisticated point defect control processes are implemented for the controlled, ...

    SBIR Phase I 2021 Department of EnergyARPA-E
  6. Ion implantation-enabled fabrication of AlN based Schottky diodes

    SBC: ADROIT MATERIALS, INC.            Topic: T

    The objective of this work is to develop AlN-based Schottky diodes with electrical properties that will drastically reduce forward conduction losses compared to existing high-power diodes. This objective is achieved through ion implantation of Si in AlN, which provides a shallow ntype dopant in the n+ contact layers. Sophisticated point defect control processes are implemented for the controlled, ...

    SBIR Phase II 2021 Department of EnergyARPA-E
  7. DEVELOPMENT OF HIGH EFFICIENCY, SMALL SCALE HEAT ENGINE TECHNOLOGIES FOR POINT OF USE ELECTRICITY GENERATION SYSTEMS

    SBC: Sencera Energy Inc            Topic: DEFOA0001380

    The goal of the GENSETS program is to realize an affordable generator-engine system with 1 kW of electrical output, fuel energy content to electricity conversion efficiency exceeding 40%, long life, and low emissions. A system can be broken into 5 primary subsystems: (1) a chemical combiner or burner, (2) an engine, (3) an alternator, (4) a heat rejector, and (5) a controller. This work focuses on ...

    SBIR Phase I 2015 Department of EnergyARPA-E
  8. DEVELOPMENT OF HIGH EFFICIENCY, SMALL SCALE HEAT ENGINE TECHNOLOGIES FOR POINT OF USE ELECTRICITY GENERATION SYSTEMS

    SBC: Sencera Energy Inc            Topic: DEFOA0001380

    The goal of the GENSETS program is to realize an affordable generator-engine system with 1 kW of electrical output, fuel energy content to electricity conversion efficiency exceeding 40%, long life, and low emissions. A system can be broken into 5 primary subsystems: (1) a chemical combiner or burner, (2) an engine, (3) an alternator, (4) a heat rejector, and (5) a controller. This work focuses on ...

    SBIR Phase II 2015 Department of EnergyARPA-E
  9. DEVELOPMENT OF HIGH EFFICIENCY, SMALL SCALE HEAT ENGINE TECHNOLOGIES FOR POINT OF USE ELECTRICITY GENERATION SYSTEMS

    SBC: Sencera Energy Inc            Topic: DEFOA0001380

    The goal of the GENSETS program is to realize an affordable generator-engine system with 1 kW of electrical output, fuel energy content to electricity conversion efficiency exceeding 40%, long life, and low emissions. A system can be broken into 5 primary subsystems: (1) a chemical combiner or burner, (2) an engine, (3) an alternator, (4) a heat rejector, and (5) a controller. This work focuses on ...

    SBIR Phase II 2015 Department of EnergyARPA-E
  10. GaN Substrate Technology

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic devi ...

    SBIR Phase I 2014 Department of EnergyARPA-E
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