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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. RADIATION AND ELECTROMAGNETIC PULSE EFFECTS ON SILICON CARBIDE BASED ELECTRONICS

    SBC: CREE RESEARCH, INC.            Topic: N/A

    SILICON CARBIDE (SIC) IS A SEMICONDUCTOR THAT POSSESSES A UNIQUE COMBINATION OF PHYSICAL AND ELECTRONIC PROPERTIES THAT MAKE DEVICES PRODUCED FROM THIS MATERIAL INTRINSICALLY RADIATION AND ELECTROMAGNETIC PULSE (EMP) RESISTANT. IN ADDITION, SIC DEVICES CAN OPERATE AT VERY HIGH TEMPERATURES AND FREQUENCIES AT HIGH POWER. RECENT RESEARCHON SIC HAS RESULTED IN THE FABRICATION OF METAL-OXIDE-SEMICONDU ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  2. SUBLIMATION GROWTH OF LARGE SINGLE CRYSTALS OF BETA SILICON CARBIDE

    SBC: CREE RESEARCH, INC.            Topic: N/A

    BETA SILICON CARBIDE (B-SIC) POSSESSES A UNIQUE COMBINATION OF PROPERTIES IMPORTANT FOR APPLICATION IN HIGH FREQUENCY ELECTRONIC DEVICES CAPABLE OF OPERATING AT HIGH POWER. THE COMBINATION OF ITS WIDE BANDGAP, HIGH SATURATED ELECTRON DRIFT VELOCITY, HIGH BREAKDOWN ELECTRIC FIELD, LOW DIELECTRIC CONSTANT, AND HIGH THERMAL CONDUCTIVITYGIVE IT A FIGURE OF MERIT FOR HIGH POWER MICROWAVE APPLICATIONS T ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
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