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The Award database is continually updated throughout the year. As a result, data for the given year is not complete until April of the following year. Annual Reports data is a snapshot of agency reported information for that year and hence might look different from the live data in the Awards Information charts.

  1. High-quality, low-cost GaN single crystal substrates for high-power devices

    SBC: Fairfield Crystal Technology            Topic: 1

    The proposed project is to demonstrate a novel technique for producing GaN single-crystal boules that yield GaN wafers and substrates suitable for fabrication of GaN high-power devices. The two key attributes of the proposed novel GaN growth technique (a bulk crystal growth technique) are: a high growth rate and an ability to achieve a superior crystal quality. The novel GaN crystal growth techn ...

    SBIR Phase I 2013 Department of EnergyARPA-E
  2. Vertical GaN transistors on bulk GaN substrates

    SBC: Avogy            Topic: 1

    In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide operating temperature range (-55 to 150°C). The target specific on-resistance for the transistor is 30x low ...

    SBIR Phase I 2013 Department of EnergyARPA-E
  3. Advanced Manufacturing and Performance Enhancements for Reduced-cost Silicon Carbide MOSFETs (AMPERES)

    SBC: MONOLITH SEMICONDUCTOR INC            Topic: 1

    The team of Monolith Semiconductor, X-FAB Texas, Rensselaer, United Technologies and Univ. of Arkansas will provide breakthrough advances in switch performance and manufacturing cost reduction to deliver cost-effective 100Amp, 1200V SiC power MOSFETs to enable widespread adoption. Based on the combined expertise in both Silicon and SiC power device design and processing, Monolith Semiconductor is ...

    SBIR Phase I 2013 Department of EnergyARPA-E
  4. High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off

    SBC: MicroLink Devices            Topic: 1

    In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...

    SBIR Phase I 2013 Department of EnergyARPA-E
  5. Epitaxial GaN on flexible metal tapes for low-cost transistor devices

    SBC: IBEAM MATERIALS, INC.            Topic: 1

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase I 2013 Department of EnergyARPA-E
  6. Vertical GaN transistors on bulk GaN substrates

    SBC: Avogy            Topic: 1

    In this abstract the development of vertical power transistors utilizing bulk GaN substrates with breakdown voltages of 1200V or higher, normally-off operation, and a drain current rating of 100A is proposed. These devices will feature vertical current flow, avalanche ruggedness, and a wide operating temperature range (-55 to 150°C). The target specific on-resistance for the transistor is 30x low ...

    SBIR Phase II 2013 Department of EnergyARPA-E
  7. Advanced Manufacturing and Performance Enhancements for Reduced-cost Silicon Carbide MOSFETs (AMPERES)

    SBC: MONOLITH SEMICONDUCTOR INC            Topic: N/A

    The team of Monolith Semiconductor, X-FAB Texas, Rensselaer, United Technologies and Univ. of Arkansas will provide breakthrough advances in switch performance and manufacturing cost reduction to deliver cost-effective 100Amp, 1200V SiC power MOSFETs to enable widespread adoption. Based on the combined expertise in both Silicon and SiC power device design and processing, Monolith Semiconductor is ...

    SBIR Phase II 2013 Department of EnergyARPA-E
  8. High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off

    SBC: MicroLink Devices            Topic: DEFOA0000941

    "In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...

    SBIR Phase II 2013 Department of EnergyARPA-E
  9. Advanced Manufacturing and Performance Enhancements for Reduced-cost Silicon Carbide MOSFETs (AMPERES)

    SBC: MONOLITH SEMICONDUCTOR INC            Topic: DEFOA0000941

    The team of Monolith Semiconductor, X-FAB Texas, Rensselaer, United Technologies and Univ. of Arkansas will provide breakthrough advances in switch performance and manufacturing cost reduction to deliver cost-effective 100Amp, 1200V SiC power MOSFETs to enable widespread adoption. Based on the combined expertise in both Silicon and SiC power device design and processing, Monolith Semiconductor is ...

    SBIR Phase II 2013 Department of EnergyARPA-E

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