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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Ultra-High-Density Arrays for Genome Research

    SBC: Accelerator Technology Corporation            Topic: N/A

    We will develop porous silicon based detector chips for the identification of biomoleculefragments. Patches of porous silicon on a silicon wafer act as active sieves, loaded with taggingmolecules, where during passage through it biomolecule fragments are identified by their response afterattachment of a tag to a modulated electric field applied across the porous patch. This technique, ifsuccessful ...

    SBIR Phase I 1994 Department of Health and Human Services
  2. Gamma Ray Lens Feasibility Study

    SBC: Acctek Associates, Inc.            Topic: N/A

    Ganuna (7)-ray lenses are an advanced technology currently under development at Argonne National Laboratory for arms control application. The purpose of this proposal is to address whether y-ray lens technology can enable an improved system for imaging radioactive isotopes in patients. In nuclear medicine, it is often desirable to generate a y-ray image that shows the exact areas where an emitting ...

    SBIR Phase I 1994 Department of DefenseDefense Advanced Research Projects Agency
  3. N/A

    SBC: Algorithm Design & Measurement            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseNavy
  4. High Mobility Silicon Carbide Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE HIGH TEMPERATURE STRENGTH OF CERAMIC MATERIALS MAKE THEM ATTRACTIVE FOR USE IN HIGH EFFICIENCY COMBUSTION ENGINES. UNFORTUNATELY, THE POOR FRICTION AND WEAR PROPERTIES OF COMMON CERAMICS OFTEN PRECLUDE THEIR USE IN ROTATING AND SLIDING COMPONENTS. SOLID STATE LUBRICANTS ARE A POTENTIAL SOLUTION TO THIS TRIBOLOGICAL PROBLEM BUT THEY ARE USUALLY INCOMPATIBLE WITH OXIDE-BASED CERAMICS. A TITANIUM ...

    SBIR Phase II 1994 Department of DefenseArmy
  5. Cubic Silicon Carbide Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Silicon carbide promises near-term insertion in high power, high temperature, applications. The wide band-gap and consequent high breakdown field of silicon carbide theoretically allows efficient high power solid state power amplifiers. Its high thermal conductivity will permit compact devices and high power density. To date, virtually all silicon carbide-based devices have been fabricated using 6 ...

    SBIR Phase II 1994 Department of DefenseAir Force
  6. GAN UV/BLUE SOLID STATE LASER

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Efficient blue and UV lasers are key to high density optical storage, novel communication systems, industrial and medical lasers, and specialized spectroscopic tools. By virtue of their direct bandgap (ranging from 2.09eV-InN to 3.44eV-GaN to 6.2eV-AlN) and lattice-matched heterostructure system, the III-V nitride-based semiconductors have the greatest potential to enable devices that will meet th ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  7. BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    We propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-P ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  8. HIGH POWER MOS TRANSISTOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The ability to control large amounts of power (1-150kW) is necessary in applications ranging from aerospace to consumer electronics to industrial power systems and transportation. In order for silicon and gallium arsenide devices to meets such high power densities, tens of devices must be combined to meet the voltage and current requirements. Power combining networks, extra heatsinking and sophist ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  9. High-Mobility Silicon-Carbide Electronics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Future aeropropulsion systems require high temperature electronics and integrated sensors to meet desired performance levels. The wide bandgap of silicon carbide (SiC) makes it ideally suited for high temperature operation. To date, virtually all SiC-based devices have been fabricated using 6H-SiC. Device performance would significantly increase if 3C-SiC, the cubic form, were available. 3C-SiC ha ...

    SBIR Phase I 1994 National Aeronautics and Space Administration
  10. Metalorganic Enhanced Ion Milling for BaSrTio3

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The demand for higher performance semiconductor devices is pushing the limits of current materials technology. The development of a high dieletric constant capacitor material with 10 - 100 times the charge storage of SiO2 would allow a flat capacitor cell to be used in 256 Mb DRAMs, and simple stacked capacitors to be adopted for 1 and 4 Gb generations. IBM, TI and Micron have entered into an ARPA ...

    SBIR Phase I 1994 Department of DefenseDefense Advanced Research Projects Agency
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