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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. High Power Frequency Doubled Laser Diode Devices

    SBC: Altos, Inc.            Topic: N/A

    This Small Business Innovation Research Phase I program will determine the practicality of increasing the second harmonic (SH) output of frequency doubling devices by at least 5 times current gutput powers. Altos has demonstrated in preliminary experiments have a 2 times to 3 times increase in SH output by creating thermal gradients across the waveguide structures used to frequency double the lase ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Si-CeO2 Silicon-On-Insulator Device Structure Grown by Laser Assisted Molecular Beam Deposition

    SBC: AMBP Technology Corporation            Topic: N/A

    We propose to develop and commercialize a Laser Assisted Molecular Beam Deposition (LAMBD) process for the growth of single crystal lattice matched CeO2 thin films on a Si substrate and thin film Si on CeO2 for the development and commercialization of silicon-on-insulator (SOI) devices and potentially Si based optoelectronic devices. CeO2 is nearly lattice matched to Si (0.35% rnismatched), which ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Pulsed Arc Molecular Beam Film and Powder Production System

    SBC: AMBP Technology Corporation            Topic: N/A

    We propose to develop and commercialize a Pulsed Arc Molecular Beam Processing (PAMBP) process which can be used to produce high quality and high purity thin films as well as nanopowders. The PAMBP source uses a pulsed valve to generate gas pulses between two electrodes. During the gas pulse, an electric discharge is struck between the electrodes causing ablation of the cathode material. The ablat ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Submicron-Resolution, Large-Area, High-Throughput Patterning System for Electronic Modules

    SBC: Anvik Corporation            Topic: N/A

    This proposal presents a program for developing a novel patterning system technology that not only delivers submicron resolution over a large image field, but also produces high exposure throughput and eliminates the shortcomings of conventional systems. The new technology is highly attractive in the fabrication of semiconductor integrated circuits and flat-panel displays. Phase I will design a sy ...

    SBIR Phase II 1997 Department of DefenseMissile Defense Agency
  5. High Efficiency Floating Junction Gallium Arsenide Solar Cell

    SBC: ASTROPOWER, INC.            Topic: N/A

    AstroPower proposes to develop a new ultra-thin gallium arsenide solar cell for space applications, that will result in significantly higher performance compared to conventional gallium arsenide and silicon solar cells. This design incorporates a "floating" junction on the front of the ultra-thin solar cell and a collecting junction at the back of the device. This design will significantly decreas ...

    SBIR Phase II 1997 Department of DefenseMissile Defense Agency
  6. Low-Defect GaN Surrogate Substrates by Epitaxial Lateral Overgrowth

    SBC: ASTROPOWER, INC.            Topic: N/A

    We propose exploratory development of new epitaxial growth technologies for low-defect GiN epitaxial structures and surrogate substrates. A significant feature of our approach is epitaxial latval overgrowth for "defect filtering." We present arguments that such epitaxial lateral overgrowth will lead to GaN material of unprecedented quality with respect to defects, stress, and purity. In the Phase ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  7. High Quality Bulk GaN Crystal Growth

    SBC: Crystal Systems, Inc.            Topic: N/A

    Crystal Systems proposes in Phase I to carry out research which will establish a scientific basis for growth of high quality GaN single crystals. This will form the basis for Phase II research and development leading to the growth of large high quality GaN boules (and possibly A N boules) and 4" wafers. There is a strong need for GaN devices in the military and the potential for extensive commerci ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Cryogenic Variable Conductance Heat Pipe

    SBC: ETA,llc            Topic: N/A

    Our proposed innovation advocates the use of well-known variable conductance heat pipe (VCHP) technology for cryogenic applications where temperature control of sensitive components is also required. IR sensors operating at cryogenic temperatures frequently require temperature control to plus or minus 1.0 degrees C while some applications demand finer control down to pluse or minus 0.1 degrees C. ...

    SBIR Phase II 1997 Department of DefenseMissile Defense Agency
  9. Multi-Evaporator Heat Pipe Network for Cryogenic Sensor Cooling

    SBC: ETA,llc            Topic: N/A

    Current thermal management systems for satellite infrared detectors employ heat pipe thermal diodes or thermal switches to couple primary and redundant mechanical cryocoolers to just a single sensor. With today's trend toward more but smaller sensors per satellite, these systems can become quite large, heavy, power hungry and expensive. Our innovation allows many sensors to be cooled with just one ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Molecular Beam Epitaxial Growth and Characterization of Novel VCSELs at 1.55 micron

    SBC: EPITAXIAL LABORATORY INC            Topic: N/A

    The vertical-cavity-surface-emitting laser(VCSEL) which operate at 1.55 or 1.3 um has been recognized as a key device in optical interconnection systems and parallel optical processing. However, the realization of these long-wavelength VCSELs with a low threshold current has long been delayed due to the absence of a highly-reflective distributed Bragg reflector(DBR). A DBR reflectivity exceeding 9 ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
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