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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Ferroelectric Capacitors for Pulse Power Electronics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    HIGH-DENSITY ENERGY STORAGE AND FAST DISCHARGE WILL BE CRITICAL IN A VARIETY OF HIGH POWER AEROSPACE APPLICATIONS. CAPACITORS ARE IDEAL FOR THESE PURPOSES, AS WELL AS FOR POWER CONDITIONING AND FILTERING. UNFORTUNATELY, BULK POWDER-BASED DIELECTRICS USED IN CAPACITORS HAVE SEVERE LIMITATIONS, ESPECIALLY THE HIGH NUMBER OF SHORT-INDUCING DEFECTS CAUSED BY POOR CONTROL OF MATERIAL PROPERTIES IN CERA ...

    SBIR Phase II 1997 Department of DefenseMissile Defense Agency
  2. Non-destructive Depth Dependent Stress Monitor

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Aircraft landing gear, and wheels in particular, are subjected to heavy loads during service. Controlled surface compressive stresses help to improve the fatigue life by reducing the probability of crack initiation and propagation from the wheel surface. Manufacturers such as Allied Signal will induce a surface compressive stress by either shot peening or roll burnishing. Acoustic an ...

    SBIR Phase II 1997 Department of DefenseAir Force
  3. Phased Array Antenna on a Wafer

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The ongoing explosion of microwave radar and communications systems calls for improvement in electronically scanned antennas (ESAs). However, current ESAs crafted from multiple individual elements are extremely expensive. Forming an antenna with integrated scanning and impedance matching elements on a single substrate using thin film technologies may decrease costs by up to two orders of magnitu ...

    SBIR Phase I 1997 Department of DefenseDefense Advanced Research Projects Agency
  4. High Temperature III-V Nitride RF Electronics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The III-V nitrides, (Al, In, Ga)N, are promising materials for high temperature, high power and high frequency devices due to the wide bandgaps, high electron saturation velocity and high electronic mobility transistor (HEMT) structures available in this alloy system. These devices would find wide-spread commercial use as power amplifiers in base station transmitters for personal communications ...

    SBIR Phase I 1997 Department of DefenseAir Force
  5. Blue-Green LED Arrays for Scanned Linear Array Imaging

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Virtual displays have tremendous potential in defense applications such as virtual reality training, battlefield support, and information systems. Full color displays require red, blue, and green LED arrays of which only red is commercially available. This program teams ATMI, a recognized leader in the GaN growth community, with Reflection Technology, a leader in virtual display technology. ATMI w ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. High Dielectric MOSFET Oxides on SiC

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Increasing thermal and power loads in circuitry demand electrical components which can operate at temperatures up to 400 C and beyond . A combination of high bandgap semiconductors and improved dielectrics is needed to solve this problem. ATMI has maj or programs in production of both SiC/GaN semiconductor materials and high dielectric constant complex oxide thin films, in particular barium stront ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  7. Edge-emitting Nitride-based Bragg Reflector Lasers

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    In this program we will develop narrow linewidth AlGaN Bragg reflector lasers suitable as injection seeds for solid-state W lasers in the range of 280 to 330 nm. These systems are compact, light weight, and low-power consuming and ideal for airborne lidar systems. Bragg reflector lasers have never been fabricated in the nitrides so in this Phase I program we will develop the technologies necessary ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Solar-blind GaN p-I-n UV Photodiodes

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Photodiodes have high efficiency since the absorption region thickness is large. However, no GaN p-i-n photodiodes have been reported due to the difficulty in achieving low background doped GaN. This Phase I program seeks to determine the increase in quantum efficiency achievable by the use of a thick intrinsic layer inserted in the p-n junction to increase the absorption region thickness. In addi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. Epi-ready SiC Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Commercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ sur ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Electromagnetic Coupling to Satellite Cavities

    SBC: ADVANCED ELECTROMAGNETICS            Topic: N/A

    The proposed research combines an innovative eigenvector method with other electromagnetic techniques to produce a hybrid approach towards solving the EM coupling to satellite cavity problem. The physical structure is divided into an exterior region and one or more interior regions. The exterior region is modeled with method of moments (MOM) and or hybrids of MOM with the uniform theory of diffr ...

    SBIR Phase II 1997 Department of DefenseAir Force

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