Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Si-CeO2 Silicon-On-Insulator Device Structure Grown by Laser Assisted Molecular Beam Deposition

    SBC: AMBP Technology Corporation            Topic: N/A

    We propose to develop and commercialize a Laser Assisted Molecular Beam Deposition (LAMBD) process for the growth of single crystal lattice matched CeO2 thin films on a Si substrate and thin film Si on CeO2 for the development and commercialization of silicon-on-insulator (SOI) devices and potentially Si based optoelectronic devices. CeO2 is nearly lattice matched to Si (0.35% rnismatched), which ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Pulsed Arc Molecular Beam Film and Powder Production System

    SBC: AMBP Technology Corporation            Topic: N/A

    We propose to develop and commercialize a Pulsed Arc Molecular Beam Processing (PAMBP) process which can be used to produce high quality and high purity thin films as well as nanopowders. The PAMBP source uses a pulsed valve to generate gas pulses between two electrodes. During the gas pulse, an electric discharge is struck between the electrodes causing ablation of the cathode material. The ablat ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Computer Enhanced Eddy Current Detection of Hidden Substructure Edges and Holes

    SBC: American Research Corporation of Virginia            Topic: N/A

    N/A

    SBIR Phase I 1997 Department of DefenseOffice of the Secretary of Defense
  5. High Quality Bulk GaN Crystal Growth

    SBC: Crystal Systems, Inc.            Topic: N/A

    Crystal Systems proposes in Phase I to carry out research which will establish a scientific basis for growth of high quality GaN single crystals. This will form the basis for Phase II research and development leading to the growth of large high quality GaN boules (and possibly A N boules) and 4" wafers. There is a strong need for GaN devices in the military and the potential for extensive commerci ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. Liquid Crystal-Based Underwater Imager

    SBC: EMPIRICAL TECHNOLOGIES CORPORATION            Topic: N/A

    The contractor proposes a new approach to underwater imaging that directly converts a two-dimmensional acoustic pressure wave into an electronic requirements fo convential piezo-element arrays. The imager relies on the piezo-birefringent properties of a nematic liquid crystal panel that serves as both sensor and display. The capability of nematic liquid crystals has been established and publishe ...

    SBIR Phase I 1997 Department of DefenseOffice of the Secretary of Defense
  7. Multi-Evaporator Heat Pipe Network for Cryogenic Sensor Cooling

    SBC: ETA,llc            Topic: N/A

    Current thermal management systems for satellite infrared detectors employ heat pipe thermal diodes or thermal switches to couple primary and redundant mechanical cryocoolers to just a single sensor. With today's trend toward more but smaller sensors per satellite, these systems can become quite large, heavy, power hungry and expensive. Our innovation allows many sensors to be cooled with just one ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Molecular Beam Epitaxial Growth and Characterization of Novel VCSELs at 1.55 micron

    SBC: EPITAXIAL LABORATORY INC            Topic: N/A

    The vertical-cavity-surface-emitting laser(VCSEL) which operate at 1.55 or 1.3 um has been recognized as a key device in optical interconnection systems and parallel optical processing. However, the realization of these long-wavelength VCSELs with a low threshold current has long been delayed due to the absence of a highly-reflective distributed Bragg reflector(DBR). A DBR reflectivity exceeding 9 ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. Development of Diode-Pumped Tunable Ultrafast Mid-Infrared laser Using CO2+-Doped II-VI Crystals

    SBC: First American International            Topic: N/A

    One of the most interesting wavelengths for many science and engineering applications is the mid-infrared band. We propose to develop a new compact tunable laser with output wavelength from 3 to 4 micrometers, pumped by powerful AlGaAs semiconductor lasers. The laser will use a new and less-explored lasing material, Co doped II-VI semiconductors, as the gain medium. The lasing medium has a strong ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. High Resolution Holographic Target Tracking Sensor

    SBC: HOLOGRAPHIC OPTICS, INC.            Topic: N/A

    Optical and infrared sensors usually track the target by measuring the spatial position of a focal spot on the matrix of detectors. Range and resolution are dependent on the quality of the optics and on the complexity of the electronics (number of detectors in the matrix, their sensitivity etc). Cost is also related to these parameters and might increase exponentially with high performance systems ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
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