You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. HLA Federation Implementation Tools

    SBC: Aegis Technologies Group, LLC, The            Topic: N/A

    The Defense Modeling and Simulation Office (DMSO) has developed the High Level Architecture (HLA) as one of the principle components of a DoD-wide Common Technical Framework for modeling and simulation (M&S). Unlike previous distributed simulation technologies such as DIS and SIMNET, HLA provides federation developers, via the Object Model Template (OMT), the means to define the structure and for ...

    SBIR Phase I 1997 Department of DefenseOffice of the Secretary of Defense
  3. Si-CeO2 Silicon-On-Insulator Device Structure Grown by Laser Assisted Molecular Beam Deposition

    SBC: AMBP Technology Corporation            Topic: N/A

    We propose to develop and commercialize a Laser Assisted Molecular Beam Deposition (LAMBD) process for the growth of single crystal lattice matched CeO2 thin films on a Si substrate and thin film Si on CeO2 for the development and commercialization of silicon-on-insulator (SOI) devices and potentially Si based optoelectronic devices. CeO2 is nearly lattice matched to Si (0.35% rnismatched), which ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Pulsed Arc Molecular Beam Film and Powder Production System

    SBC: AMBP Technology Corporation            Topic: N/A

    We propose to develop and commercialize a Pulsed Arc Molecular Beam Processing (PAMBP) process which can be used to produce high quality and high purity thin films as well as nanopowders. The PAMBP source uses a pulsed valve to generate gas pulses between two electrodes. During the gas pulse, an electric discharge is struck between the electrodes causing ablation of the cathode material. The ablat ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. Computer Enhanced Eddy Current Detection of Hidden Substructure Edges and Holes

    SBC: American Research Corporation of Virginia            Topic: N/A

    N/A

    SBIR Phase I 1997 Department of DefenseOffice of the Secretary of Defense
  6. Nuclear Weapons Effects Phenomenology

    SBC: Applied Physics Technologies            Topic: N/A

    The nuclear weapons community has traditionally focused on the next generation or level of weapon capability complimented by gathering and analysis of actual test data. Now, with the cessation of actual weapons testing, there is an increased need to use the actual test data in modeling techniques to better understand the phenomenology and potential effects of nuclear weapons. The first phase of ...

    SBIR Phase I 1997 Department of DefenseDefense Threat Reduction Agency
  7. Laser Turbulence Measurements in the LB/TS

    SBC: Applied Research Associates, Inc.            Topic: N/A

    Turbulence of gas flows by its very nature is one of the most difficult things to model and measure. We propose to develop a new way of measuring the turbulence and to compare these measurements to predictions using the k-epsilon model. Typical measurements, in the past, use smoke, Schlierin or shadow graph techniques to visually infer turbulence characteristics. These features are either motio ...

    SBIR Phase I 1997 Department of DefenseDefense Threat Reduction Agency
  8. Novel Synthesis of Fluorinated Parylenes for Low-K Interlayer Dielectric Applications in Submicron ICs

    SBC: Brewer Science Incorporated            Topic: N/A

    As IC manufacturers pursue larger wafer sizes and smaller device features (0.25 um), the interlayer dielectric material becomes critical . Current interlayer dielectric materials, inorganic oxides and spin-coated polymeric materials, have serious deficiencies (e.g.,k >3, water absorption, and spin coating defects). This has led IC manufacturers to search for low-k($6000/lb) has hampered commercial ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. Novel Photorefractive Time-Integrating Detector for the Radar Signal Processing

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    Using newly developed II-VI photorefractive semiconductors as time integrator and high performance TeO2 acousto optic deflectors (AODs), Brimrose proposes to develop a compact RF signal processor useful in radar signal processing. The high sensitivity of this relatively new photorefractives, in the wavelength range of 0.63ym to 1.6,um, will allow signal processing using low power near infrared las ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Multilayer Capacitors Utilizing Phase Change Ceramics for High Energy Storage

    SBC: TRS CERAMICS, INC.            Topic: N/A

    For this Phase I SBIR program, high volumetric efficiency, energy storage capacitors are proposed using phase change ceramics. These materials are nonlinear dielectrics that make use of electric field induced antiferroelectric to ferroelectric phase transition to store more energy per volume than is possible with linear dielectrics (10 J/cm3 compared to 2 J/cm3). Furthermore phase change materia ...

    SBIR Phase I 1997 Department of DefenseDefense Threat Reduction Agency
US Flag An Official Website of the United States Government