Award Data

ACX proposes to develop durable and reliable conformal geometry actuator packages. These packages will have the ability to operate as linear actuators for motion control applications as well as to conform to structures with curved surfaces for applications requiring induced strain actuation. These packages provide a protective skin offering electrical isolation, and provide a means for integration ...

Virtual displays have tremendous potential in defense applications such as virtual reality training, battlefield support, and information systems. Full color displays require red, blue, and green LED arrays of which only red is commercially available. This program teams ATMI, a recognized leader in the GaN growth community, with Reflection Technology, a leader in virtual display technology. ATMI w ...

Increasing thermal and power loads in circuitry demand electrical components which can operate at temperatures up to 400 C and beyond . A combination of high bandgap semiconductors and improved dielectrics is needed to solve this problem. ATMI has maj or programs in production of both SiC/GaN semiconductor materials and high dielectric constant complex oxide thin films, in particular barium stront ...

In this program we will develop narrow linewidth AlGaN Bragg reflector lasers suitable as injection seeds for solid-state W lasers in the range of 280 to 330 nm. These systems are compact, light weight, and low-power consuming and ideal for airborne lidar systems. Bragg reflector lasers have never been fabricated in the nitrides so in this Phase I program we will develop the technologies necessary ...

Photodiodes have high efficiency since the absorption region thickness is large. However, no GaN p-i-n photodiodes have been reported due to the difficulty in achieving low background doped GaN. This Phase I program seeks to determine the increase in quantum efficiency achievable by the use of a thick intrinsic layer inserted in the p-n junction to increase the absorption region thickness. In addi ...

Commercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ sur ...

This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

SOI technology offers the potential for creating radiation hard integrated circuits which can operate at low power and high speed. These advances are important for DoD and space applications and for battery operated devices. SOI is excellent for rad-hard applications because dielectric isolation of active circuitry from the supporting substrate by the Buried OXygen (BOX) layer enhances resistance ...

Silicon avalanche photodiodes are among the most sensitive optical detectors available today. It 11as been shown that large area APDs are potentially an excellent alternative to photomultiplier tubes (PMTs) in applications such as LIDAR, nuclear medicine, physics research and nuclear radiation measurement instrumentation. They can offer improved performance based on their compact size, solid state ...

New power semiconductor device performance is limited by cooling because high heat-flux cooling systems have not matched their increased power density. Therefore, real designs rarely achieve device ratings. American Superconductor (ASC) demonstrated CryoPower+, which cools a variety of power MOSFET topologies by direct immersion in coolants from 77-300K, with boiling where appropriate. CryoPower ( ...