Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Sensors-Adaptive Beam Expander

    SBC: LSA            Topic: N/A

    We propose to design and fabricate an adaptive beam expander that can be switched between two magnifications. Specifically, the beam expander provides diffraction-limited performance for laser radar beams with diameters of 1 mm and 3 mm. The adaptive beam expander is lightweight, and it has no moving parts. Because the beam expander is an afocal system, it operates on both outgoing and incoming be ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Plasma Synthesis of Aluminum Nitride Nanopowders

    SBC: Materials Modifications Inc.            Topic: N/A

    Aluminum nitride is as an ideal thermal management material since it has a very high thermal conductivity and its electrical resistivity is comparable to that of ceramic insulators. Aluminum nitride has thermal conductivity five times greater than alumina and has mechanical strength twice that of alumina and beryllium oxide. The current methods of synthesizing and consolidating aluminum nitride re ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Application of a Novel Micromachining Process to Millimeter Wave Circuit Fabrication

    SBC: MICROFAB (WASVA MILLIMETER WAVE)            Topic: N/A

    MicroFab Research (MFR, Inc.) proposes to apply the techniques of micromachining to aid in the fabrication of millimeter wave components, thereby reducing manufacturing expenses. Many microwave applications such as radar and communication systems would be improved by shifting to higher frequencies, provided new lower cost manufacturing techniques can be found. A manufacturing technique is presente ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. Development of a Compact Electron Beam Accelerator

    SBC: MICROWAVE TECHNOLGIES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. Advanced Metal Powder Manufacture for MLCC Applications

    SBC: NANOCHEM RESEARCH, INC.            Topic: N/A

    Sensors, capacitors, and conducting features such as resistors and capacitors on circuit boards are produced from metal and ceramic powders 1-12 These powders are manufactured by liquid phase precipitation routes which often start with reduction of metal salts or by solid-state routes where solid reactants are mixed, heated and then milled. The solid-state processing is generally repeated several ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  7. Embedded Sensors via Laser Engineered Net Shaping

    SBC: OPTOMEC, INC.            Topic: N/A

    Optomec Design Company proposes to use Laser Engineered Net Shaping (LENSTM), a Rapid Prototyping and Manufacturing (RP&M) technology currently under development at Sandia National Laboratories (SNL), as a new method for integrating instrumentation (e.g., embedded sensors) into metal structural components. SNL has demonstrated the ability of the LENSTM technology to produce near net shape stainles ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Ultrahigh Quality, Single-Crystal Bulk Silicon Carbide

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    Silicon carbide materials will revolutionize semiconductor devices for military and commercial markets. The material's wide bandgap, high electric field breakdown, high thermal conductivity give SiC capabilities that far exceed those of silicon or gallium arsenide. Despite significant progress in silicon carbide development, fundamental defects--most prominently micropipes--persist. If SiC is to s ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. Optimal SiC Source Powder for Bulk SiC Growth

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    The properties of single-crystal silicon carbide are such that electronics devices from this material have demonstrated remarkable performance characteristics. Despite the material's promise, the material has not yet found acceptance in mainstream device markets because of the material's high cost, among other reasons. This Phase I SBIR proposes an SiC source powder with unique properties which wi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Advanced Projectile Diverters for Strategic Defense and Theater Missile Defense Miniature Interceptor Applications

    SBC: Tg&c Assoc., Inc.            Topic: N/A

    This proposal addresses the exploratory development and evaluation of novel thin film and/or monolithic detonators as diverters for guided spinning projectile use. A number of such detonators comprise a diverter technology termed RMDM, (for Ring Matrix Diverter Module) which, along with the SSPG (for Small Spinning Projectile Guidance) seeker, forms the basis for inexpensive miniature guided proje ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government