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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Si-CeO2 Silicon-On-Insulator Device Structure Grown by Laser Assisted Molecular Beam Deposition

    SBC: AMBP Technology Corporation            Topic: N/A

    We propose to develop and commercialize a Laser Assisted Molecular Beam Deposition (LAMBD) process for the growth of single crystal lattice matched CeO2 thin films on a Si substrate and thin film Si on CeO2 for the development and commercialization of silicon-on-insulator (SOI) devices and potentially Si based optoelectronic devices. CeO2 is nearly lattice matched to Si (0.35% rnismatched), which ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Pulsed Arc Molecular Beam Film and Powder Production System

    SBC: AMBP Technology Corporation            Topic: N/A

    We propose to develop and commercialize a Pulsed Arc Molecular Beam Processing (PAMBP) process which can be used to produce high quality and high purity thin films as well as nanopowders. The PAMBP source uses a pulsed valve to generate gas pulses between two electrodes. During the gas pulse, an electric discharge is struck between the electrodes causing ablation of the cathode material. The ablat ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Novel Synthesis of Fluorinated Parylenes for Low-K Interlayer Dielectric Applications in Submicron ICs

    SBC: Brewer Science Incorporated            Topic: N/A

    As IC manufacturers pursue larger wafer sizes and smaller device features (0.25 um), the interlayer dielectric material becomes critical . Current interlayer dielectric materials, inorganic oxides and spin-coated polymeric materials, have serious deficiencies (e.g.,k >3, water absorption, and spin coating defects). This has led IC manufacturers to search for low-k($6000/lb) has hampered commercial ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. Novel Photorefractive Time-Integrating Detector for the Radar Signal Processing

    SBC: BRIMROSE CORPORATION OF AMERICA            Topic: N/A

    Using newly developed II-VI photorefractive semiconductors as time integrator and high performance TeO2 acousto optic deflectors (AODs), Brimrose proposes to develop a compact RF signal processor useful in radar signal processing. The high sensitivity of this relatively new photorefractives, in the wavelength range of 0.63ym to 1.6,um, will allow signal processing using low power near infrared las ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. High Quality Bulk GaN Crystal Growth

    SBC: Crystal Systems, Inc.            Topic: N/A

    Crystal Systems proposes in Phase I to carry out research which will establish a scientific basis for growth of high quality GaN single crystals. This will form the basis for Phase II research and development leading to the growth of large high quality GaN boules (and possibly A N boules) and 4" wafers. There is a strong need for GaN devices in the military and the potential for extensive commerci ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  7. Algorithms for Improved Performance of Focal Plane Arrays

    SBC: EAST WEST ENTERPRISES, INC.            Topic: N/A

    New methods that will significantly improve the performance of focal plane array systems are proposed . In particular the problem of target track reacquisition ( lost due to cloud clutter effects) will be studied in detail . We propose to investigate the applications of (1) the method of "smart averaging " ( introduced and developed by Boeing) and extensions thereof (2) Probabilistic methods, to t ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Multi-Evaporator Heat Pipe Network for Cryogenic Sensor Cooling

    SBC: ETA,llc            Topic: N/A

    Current thermal management systems for satellite infrared detectors employ heat pipe thermal diodes or thermal switches to couple primary and redundant mechanical cryocoolers to just a single sensor. With today's trend toward more but smaller sensors per satellite, these systems can become quite large, heavy, power hungry and expensive. Our innovation allows many sensors to be cooled with just one ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. Molecular Beam Epitaxial Growth and Characterization of Novel VCSELs at 1.55 micron

    SBC: EPITAXIAL LABORATORY INC            Topic: N/A

    The vertical-cavity-surface-emitting laser(VCSEL) which operate at 1.55 or 1.3 um has been recognized as a key device in optical interconnection systems and parallel optical processing. However, the realization of these long-wavelength VCSELs with a low threshold current has long been delayed due to the absence of a highly-reflective distributed Bragg reflector(DBR). A DBR reflectivity exceeding 9 ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Programmable Multi-Wavelength Detector Array

    SBC: Epitaxial Technologies, LLC            Topic: N/A

    Epitaxial Technologies proposes to develop the enabling material technology for the fabrication of programmable multi-wavelength photodetector arrays. We will perform material and device design to determlne suitable material structures and epitaxial wafer growth processes. We will investigate the use of compound semiconductor structures lattice matched to InP. The main goal of this proposed Phase ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
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