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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Catalytic Conversion Recycling Process for Composite Aircraft Components

    SBC: Adherent Technologies, Inc.            Topic: N/A

    Cured aircraft composite materials present a particularly difficult challenge for recycling technology. Those materials have mostly thermosetting epoxy matrices and occur in intimate association with metals, paints, and coatings. Current techniques for recycling thermoset composites, mostly for automotive sheet molding compounds (SMC), involve pulverizing the material for use as fillers. Th ...

    SBIR Phase II 1998 Department of DefenseNavy
  2. Modulation-Doped A1 GaN/Gan Heterostructures and Devices on Semi-Insulating SIC Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  3. Interconnect Technology for High Temperature SiC Integrated Circuits

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices, contacts and interconnect materials, be ...

    SBIR Phase II 1998 Department of DefenseAir Force
  4. High Temperature III-V Nitride RF Electronics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The III-V nitrides, (Al, In, Ga)N, are promising materials for high temperature, high power and high frequency devices due to the wide bandgaps, high electron saturation velocity and high electronic mobility transistor (HEMT) structures available in this alloy system. These devices would find wide-spread commercial use as power amplifiers in base station transmitters for personal communications ...

    SBIR Phase II 1998 Department of DefenseAir Force
  5. Novel Polishing and Reactor Technologies for SiC Epitaxial Growth

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Commercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ sur ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  6. HIGH TEMPERATURE INTEGRATED CAPACITORS

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Next generation power electronic systems for military aircraft will require capacitors with reliable performance at temperatures from -55 up to 300 degrees C and beyond for filters, power converters and other control circuitry. Thin film integrated passive devices with lower dissipation and electrical leakage will also be needed, especially at high frequencies. Thin films have inherently high bre ...

    SBIR Phase I 1998 Department of DefenseAir Force
  7. Vandium Precursors for Semi-Insulating SiC Epilayers

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Silicon carbide (SiC) is an ideal semiconductor material for high temperature, high frequency, and high power electronic devices. A SiC technology analogous to silicon - on -insulator (SOI) will be feasible if a suitable dopant precursor and epitaxial growth technique to produce semi-insulating SiC can be developed. Vanadium is an attractive dopant for the formation of semi-insulating SiC. In Phas ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  8. Radiation hard, nonvolatile, NRDO memory elements

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Metal-ferroelectric-semiconductor field effect transistors (MFS-FETs) have a can be used as nonvolatile memory devices. The primary ferroelectric materials for these devices are perovskite oxides such as lead zirconium titanate (PZT) and strontium bismuth tantalate (SBT). These materials contain highly mobile elements (Pb and Bi) that can interact with silicon at process temperatures and lead to a ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  9. LOW DEFECT DENSITY GaN PHOTODIODE

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    GaN-based p-i-n photodiodes are in ideal choice for the Air Force's UV radiation measurements needs since these solid-state detectors are compact, light, and have low power consumption. However, current GaN photodiodes have much larger dark currents than expected. This Phase I program seeks to dramatically improve the current state of GaN photodiodes by employing low dislocation density epitaxia ...

    SBIR Phase I 1998 Department of DefenseAir Force
  10. An automated system for accurately tracking and measuring multiple targets in six dimensions

    SBC: ADVANCED OPTICAL TECHNOLOGIES INCORPORATED            Topic: N/A

    The technique for accurately measuring the positions and orientations of targets in relation to a fixed reference is of fundamental importance to a number of military and commercial applications. For example, in the simulation experiments for testing of installed, integrated avionics, the configuration geometry data for hundreds of test assets, each having six-degree-of-freedom must be automatica ...

    SBIR Phase II 1998 Department of DefenseAir Force

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