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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Modulation-Doped A1 GaN/Gan Heterostructures and Devices on Semi-Insulating SIC Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  2. Novel Polishing and Reactor Technologies for SiC Epitaxial Growth

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Commercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ sur ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  3. Vandium Precursors for Semi-Insulating SiC Epilayers

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Silicon carbide (SiC) is an ideal semiconductor material for high temperature, high frequency, and high power electronic devices. A SiC technology analogous to silicon - on -insulator (SOI) will be feasible if a suitable dopant precursor and epitaxial growth technique to produce semi-insulating SiC can be developed. Vanadium is an attractive dopant for the formation of semi-insulating SiC. In Phas ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  4. Radiation hard, nonvolatile, NRDO memory elements

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Metal-ferroelectric-semiconductor field effect transistors (MFS-FETs) have a can be used as nonvolatile memory devices. The primary ferroelectric materials for these devices are perovskite oxides such as lead zirconium titanate (PZT) and strontium bismuth tantalate (SBT). These materials contain highly mobile elements (Pb and Bi) that can interact with silicon at process temperatures and lead to a ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  5. Electroluminescent Nanocrystal/Quantum Dot Based Phosphors

    SBC: E-LITE TECHNOLOGIES, INC.            Topic: N/A

    This proposal aims to develop quantum-dot based nanophosphors, using cladded and doped nanocrystals. These high-efficiency and fast response (nanoseconds) phosphors will be utilized in Phase II for the fabrication of full color, flexible, flat panel displays and illuminators, utilizing self-assembly techniques. Doped nanocrystals have demonstrated enhanced photolurninescence (e.g. quantum efficie ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  6. High-Voltage, High Rep-Rate UWB Source with Ferroelectric Trigger

    SBC: FARR RESEARCH, INC.            Topic: N/A

    We propose here a ferroelectric trigger for a UWB source with high voltages and operated at high rep rate. This trigger will be simpler and more reliable than existing designs, and will be implemented at lower cost. In addition, this trigger will allow operation at much higher rep rates than existing designs. Finally, the proposed switch will have a lower jitter than competing designs. During Pha ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  7. Ultraspectral Imager

    SBC: Kestrel Corporation            Topic: N/A

    This Phase I SBIR demonstrates the underlying technology required to construct an ultraspectral imager that has the ability to spectrally resolve molecular absorption lines while simultaneously creating a two dimensional spatial mapping. The proposed instrument will have a spectral resolution that is better than 2 cm-1 and two dimensional spatial resolution that exceeds 2 milliradian. Based on Fou ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  8. Atmospheric Turbulence Measurement System

    SBC: Kestrel Corporation            Topic: N/A

    In this Phase I SBIR a totally new, non intrusive optical method for making fundamental atmospheric turbulence measurements will be investigated. A correlation between the movement of a pair of thin beams is used to define the inner and outer scale size independent of any assumed turbulence model and to calculate the index of refraction coefficient. During the effort, extensions will be made to th ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  9. Development of a New Method for Fabricating SiC-On-Insulator Compliant Substrate

    SBC: Materials Technologies Corporation            Topic: N/A

    SURVEILLANCE IN THE INFRA-RED PART OF THE ELECTROMAGNETIC SPECTRUM DEMANDS INNOVATIVE CONCEPTS TO DESIGN QUANTUM WELL (QW) DETECTORS FOR WAVELENGTH BEYOND 12 UM. THE REQUIREMENT FOR LOW TUNNELING CURRENT AND SUPERIOR TRANSPORT PROPERTIES MAKE InAs-In(x)Ga(1-x)Sb, A TYPE II SUPERLATTICE, A SUITABLE CANDIDATE FOR INFRA-RED APPLICATION. STRAIN INDUCED BAND GAP VARIATION AND WAVELENGTH CONTROLLABILITY ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency
  10. Advanced Metal Powder Manufacture for MLCC Applications

    SBC: NANOCHEM RESEARCH, INC.            Topic: N/A

    Sensors, capacitors, and conducting features such as resistors and capacitors on circuit boards are produced from metal and ceramic powders 1-12 These powders are manufactured by liquid phase precipitation routes which often start with reduction of metal salts or by solid-state routes where solid reactants are mixed, heated and then milled. The solid-state processing is generally repeated several ...

    SBIR Phase II 1998 Department of DefenseMissile Defense Agency

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