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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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CLINICAL SCALE EXPANSION OF HUMAN DENDRITIC CELLS
SBC: Aastrom Biosciences, Inc. Topic: N/AN/A
SBIR Phase I 1998 Department of Health and Human Services -
Inflatable Spacecraft Using &quotRigidization On Command&quotTechnology
SBC: Adherent Technologies, Inc. Topic: N/AN/A
SBIR Phase I 1998 National Aeronautics and Space Administration -
HIGH TEMPERATURE INTEGRATED CAPACITORS
SBC: Advanced Technologies/Laboratories Intl Topic: N/ANext generation power electronic systems for military aircraft will require capacitors with reliable performance at temperatures from -55 up to 300 degrees C and beyond for filters, power converters and other control circuitry. Thin film integrated passive devices with lower dissipation and electrical leakage will also be needed, especially at high frequencies. Thin films have inherently high bre ...
SBIR Phase I 1998 Department of DefenseAir Force -
Vandium Precursors for Semi-Insulating SiC Epilayers
SBC: Advanced Technologies/Laboratories Intl Topic: N/ASilicon carbide (SiC) is an ideal semiconductor material for high temperature, high frequency, and high power electronic devices. A SiC technology analogous to silicon - on -insulator (SOI) will be feasible if a suitable dopant precursor and epitaxial growth technique to produce semi-insulating SiC can be developed. Vanadium is an attractive dopant for the formation of semi-insulating SiC. In Phas ...
SBIR Phase I 1998 Department of DefenseMissile Defense Agency -
Radiation hard, nonvolatile, NRDO memory elements
SBC: Advanced Technologies/Laboratories Intl Topic: N/AMetal-ferroelectric-semiconductor field effect transistors (MFS-FETs) have a can be used as nonvolatile memory devices. The primary ferroelectric materials for these devices are perovskite oxides such as lead zirconium titanate (PZT) and strontium bismuth tantalate (SBT). These materials contain highly mobile elements (Pb and Bi) that can interact with silicon at process temperatures and lead to a ...
SBIR Phase I 1998 Department of DefenseMissile Defense Agency -
LOW DEFECT DENSITY GaN PHOTODIODE
SBC: Advanced Technologies/Laboratories Intl Topic: N/AGaN-based p-i-n photodiodes are in ideal choice for the Air Force's UV radiation measurements needs since these solid-state detectors are compact, light, and have low power consumption. However, current GaN photodiodes have much larger dark currents than expected. This Phase I program seeks to dramatically improve the current state of GaN photodiodes by employing low dislocation density epitaxia ...
SBIR Phase I 1998 Department of DefenseAir Force -
SBIR Phase I: Single Source Precursors for Fiber Reinforced Composites
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase I 1998 National Science Foundation -
Microhotplate Based, Palladium-Coated Metal-Hydride Thin Film Hydrogen Sensor arrays
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase I 1998 National Aeronautics and Space Administration -
SBIR Phase I: Adaptive Control of Chemical Processes Based on Fourier Transform Infrared (FT-IR
SBC: ADVANCED FUEL RESEARCH, INC. Topic: N/AN/A
SBIR Phase I 1998 National Science Foundation -
The Manaufacture of Carbon Black Oils Derived from Scrap Tires
SBC: ADVANCED FUEL RESEARCH, INC. Topic: N/AN/A
SBIR Phase I 1998 Environmental Protection Agency