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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Catalytic Conversion Recycling Process for Composite Aircraft Components
SBC: Adherent Technologies, Inc. Topic: N/ACured aircraft composite materials present a particularly difficult challenge for recycling technology. Those materials have mostly thermosetting epoxy matrices and occur in intimate association with metals, paints, and coatings. Current techniques for recycling thermoset composites, mostly for automotive sheet molding compounds (SMC), involve pulverizing the material for use as fillers. Th ...
SBIR Phase II 1998 Department of DefenseNavy -
Inflatable Spacecraft Using &quotRigidization On Command&quotTechnology
SBC: Adherent Technologies, Inc. Topic: N/AN/A
SBIR Phase I 1998 National Aeronautics and Space Administration -
SBIR Phase I: Tertiary Recycling Process for Polymer-Based Automotive Components
SBC: Adherent Technologies, Inc. Topic: N/AN/A
SBIR Phase II 1998 National Science Foundation -
Modulation-Doped A1 GaN/Gan Heterostructures and Devices on Semi-Insulating SIC Substrates
SBC: Advanced Technologies/Laboratories Intl Topic: N/AThe need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for ...
SBIR Phase II 1998 Department of DefenseMissile Defense Agency -
Interconnect Technology for High Temperature SiC Integrated Circuits
SBC: Advanced Technologies/Laboratories Intl Topic: N/AIntegration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices, contacts and interconnect materials, be ...
SBIR Phase II 1998 Department of DefenseAir Force -
High Brightness LEDs based on the (A1, Ga,In)N Materials System
SBC: Advanced Technologies/Laboratories Intl Topic: N/A116 High Brightness LEDs based on the (Al, Ga,In)N Materials System--Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810-4131; Dr. Karim Boutros, Principal Investigator Dr. Duncan W. Brown, Business Official DOE Grant No. DE-FG02-97ER82319 Amount: $75,000 Based on a combination of physical, electronic and optical properties, the semiconductor materials system (aluminum, g ...
SBIR Phase II 1998 Department of Energy -
High Temperature III-V Nitride RF Electronics
SBC: Advanced Technologies/Laboratories Intl Topic: N/AThe III-V nitrides, (Al, In, Ga)N, are promising materials for high temperature, high power and high frequency devices due to the wide bandgaps, high electron saturation velocity and high electronic mobility transistor (HEMT) structures available in this alloy system. These devices would find wide-spread commercial use as power amplifiers in base station transmitters for personal communications ...
SBIR Phase II 1998 Department of DefenseAir Force -
Novel Polishing and Reactor Technologies for SiC Epitaxial Growth
SBC: Advanced Technologies/Laboratories Intl Topic: N/ACommercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ sur ...
SBIR Phase II 1998 Department of DefenseMissile Defense Agency -
HIGH TEMPERATURE INTEGRATED CAPACITORS
SBC: Advanced Technologies/Laboratories Intl Topic: N/ANext generation power electronic systems for military aircraft will require capacitors with reliable performance at temperatures from -55 up to 300 degrees C and beyond for filters, power converters and other control circuitry. Thin film integrated passive devices with lower dissipation and electrical leakage will also be needed, especially at high frequencies. Thin films have inherently high bre ...
SBIR Phase I 1998 Department of DefenseAir Force -
Vandium Precursors for Semi-Insulating SiC Epilayers
SBC: Advanced Technologies/Laboratories Intl Topic: N/ASilicon carbide (SiC) is an ideal semiconductor material for high temperature, high frequency, and high power electronic devices. A SiC technology analogous to silicon - on -insulator (SOI) will be feasible if a suitable dopant precursor and epitaxial growth technique to produce semi-insulating SiC can be developed. Vanadium is an attractive dopant for the formation of semi-insulating SiC. In Phas ...
SBIR Phase I 1998 Department of DefenseMissile Defense Agency