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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

Displaying 1 - 10 of 145 results
 
  • Record 1 TO 145

  1. Pcmcia Ecg Monitoring System for Handheld Computers

    SBC: ADVANCED MEDICAL ELECTRONICS CORP            Topic: N/A

    An ECC monitoring system in the form of a miniature Personal Computer Memory Card International Ass(PCMCIA) card is proposed. PCMCIA is a standard for credit card-sized ( 5mm x 86mm x 54 mm) peripherdesigned to use with notebook and handheld computers. The user can quickly remove and add these cardportable computers. Cards are manufactured that add I/0 devices to the computer, such as modems, loc( ...

    SBIR Phase I 1995 Department of Health and Human Services

  2. Wireless Sleep Disorder Monitoring System

    SBC: ADVANCED MEDICAL ELECTRONICS CORP            Topic: N/A

    N/A

    SBIR Phase I 1995 Department of Health and Human Services

  3. Long Term UV-B Record Keeping of Outdoor Workers

    SBC: ADVANCED MEDICAL ELECTRONICS CORP            Topic: N/A

    N/A

    SBIR Phase I 1995 Department of Health and Human Services

  4. Multicolor UV Seeker Based on GaN/GaAs Heterostructures

    SBC: Apa Optics, Inc.            Topic: N/A

    APA Optics will develop a monolithic UV seeker for use in flame sensing and passive or tactical threat warning systems. The key to the technical approach is the deposition of high optical/electrical quality Al(x)Ga(1-x)N over GaAs substrates and using it to fabricate back to back Schottky barrier detectors. Al(x)Ga(1-x)N is a compound III/V semiconductor system with a bandgap tunable from 220 to 3 ...

    SBIR Phase II 1995 Department of DefenseMissile Defense Agency

  5. Growth of Bulk Single Crystal A1N Substrates for A1GaN Epitaxy

    SBC: Apa Optics, Inc.            Topic: N/A

    We propose a six month Phase I program to demonstrate the feasibility of growing A1N single crystals to serve as substrates for subsequent A1xGa1xN epitaxy. Our approach is to use a low pressure, high temperature (>>2000oC) furnace with a temperature gradient between the A1N charge and the deposition (seed) regions. Our approach is based on several innovations. These include the use of single prec ...

    SBIR Phase II 1995 Department of DefenseDefense Advanced Research Projects Agency

  6. GaN/AlN Based High Voltage Heterostructure Transistor

    SBC: Apa Optics, Inc.            Topic: N/A

    High voltage semiconductor devices have found important applications in the areas of high power generation, power control, power conversion, surge protection, and industrial electronics. However, GaAs or Si based high voltage device are limited by a relatively low intrinsic breakdown voltage and,therefore, inherently suited for high power applications. We propose to develop novel high voltage hete ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency

  7. Development of Compliant Substrates for GaN Epitaxy

    SBC: Apa Optics, Inc.            Topic: N/A

    We propose a six month Phase I research program aimed at developing compliant substrates for the epitaxy of GaN and AlGaN films. We present two alternate approaches one with silicon and the other with GaAs as the starting substrate material and a unique multilayer structure to be deposited using low pressure MOCVD. We propose to investigate an approach based on the use of SIMOX substrates. These c ...

    SBIR Phase I 1995 Department of DefenseNavy

  8. A GaN-A1GaN CCD for UV Imaging Applications

    SBC: Apa Optics, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1995 Department of DefenseAir Force

  9. High Power, Sub-Nanosecond Laser Diode Driver

    SBC: Aria Corp            Topic: N/A

    This proposal describes a new approach to laser diode drivers which combines the unique advantages of three key technologies. The innovative approach will extend the performance capabilities of laser diode systems to greater than 200 A peak pulse current, less than one nanosecond rise time, at greater than 10 KHz repetition rates. Not customarily used in laser diode drivers, the unique combinati ...

    SBIR Phase I 1995 Department of DefenseAir Force

  10. Low-Cost, Lightweight Aircraft Emergency Recovery System

    SBC: Ballistic Recovery Systems, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1995 National Aeronautics and Space Administration
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