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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.

Download all award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. 2-Dimensional, Microchannel Plate, Anti-scatter Focusing Grid for Superior X-ray Imaging Instruments

    SBC: Alameda Applied Sciences Corporation            Topic: N/A

    Alameda Applied Sciences Corporation (AASC) proposes to develop a new class of x-ray imaging instruments based on a 2-dimensional, square-pore microchannel plate technology. This square-pore technology could lead to higher sensitivity x-ray telescopes in astronomy, wide field of view sensors for the BMDO mission and to superior anti-scatter grids to enhance contrast and resolution in mammography s ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  2. Photorefractive Optical Limiter for Sensor Protection

    SBC: Accuwave Corp.            Topic: N/A

    Accuwave Corporation will demonstrate an optical limiter for sensor protection using two-beam coupling in a photorefrac-tive material to attenuate coherent input light while leaving incoherent light unaffected. Methods for decreasing response time in BaTiO3, SBN, and similar materials will be investigated. A laboratory breadboard telescope system with an integrated limiting element will be demonst ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  3. Ion-Implanted 2-D MESFET Technology for Wireless Communications

    SBC: Advanced Device Technologies,            Topic: N/A

    This Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. Development of a Woven Grid Quasi-Bipolar Battery

    SBC: AEROVIRONMENT, INC.            Topic: N/A

    A new high-power, high voltage sealed, quasi-bipolar lead acid battery design is proposed for development which can operate under the broad range of conditions important to the Air Force. Key features of the design include: Low cost 700 W/kg, calculated Very high power density >1800 W/I, calculated Moderate specific energy >50 Wh/kg @ C/2, calculated Good energy density >120 Wh/I @ C/2, calculate ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  5. Revolutionary Epoxy Technology for High Tg MCM Substrates

    SBC: Aguila Technologies, Inc.            Topic: N/A

    The goal of this program is the development of low cost, low viscosity and high performance epoxy resins cured by a novel method, for use in multichip modules (MCM) substrates. The revolutionary epoxy resin, invented by the principle investigator of this proposal, has very high temperature performance (Tg of 280_C to 320_C), low dielectric constant (less than 3), and outstanding moisture resistanc ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. All Digital Imager with per Pixel on focal Plan Analog to Digital Conversion and Digital Display

    SBC: AMAIN ELECTRONICS CO., INC.            Topic: N/A

    As the size of staring sensors increase, the bandwidth to move data off the focal plane increases proportional to the number of pixels in the array. For analog focal planes, increased bandwidth also means increased noise. Readout noise limited systems wili be less sensitive, detector noise limited systems may become readout limited at the higher bandwidths. Power dissipation wili also increase wit ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  7. Production of Semiconductor Grade Crystals from Recovered GaAs and InP Manufacturing Wastes


    On-site recovery of constituent materials from compound semiconductor waste streams presents an opportunity for reduction of hazardous material waste and cost of manufacturing. UDRI has developed a low-cost process for recovering gallium and arsenic from the production of gallium arsenide where the primary contaminant is the other element of the binary compound. This method can be applied to other ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. A Pulsed-Power Driven Krypton Soft X-Ray Laser Based on A Stabilized Z-Pinch Load

    SBC: BERKELEY RESEARCH ASSOC., INC.            Topic: N/A

    Pulsed power is known to be the most efficient way of converting stored electrical energy into plasma thermal energy. Such plasma thermal energy would be available for pumping a soft x-ray laser. High-gain 3s - 3p transitions in neon-like krypton are very attractive for lasing (high rate of collisional excitation to the upper lasing level, fast decay of lower lasing level). Existsng pulsed-power d ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. Advanced Low-k Dielectrics by the Sol-Gel Process

    SBC: Chemat Technology, Inc.            Topic: N/A

    In this proposal, we plan to synthesize a novel, new, UV-curable and fluorinated polymer using fluoronation and sol-gel process. This polymer has been proven to be a good replacement for spin-on glass (SOG). This polymer can be converted to a highly porous organic/inorganic composite at relatively low process temperature by controlling heat treatment temperatures, atmospheres and the sequence. Thi ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. CVD Diamond for SAW Devices

    SBC: Crystallume/edi            Topic: N/A

    CVD diamond will be explored for high frequency bandpass filters in Phase I by producing an ultra-smooth diamond coating over an 8in. diamond silicon wafer. Current materials limit the frequency response of SAW devices requiring the use of a substrate with higher sonic velocity. Diamond has the highest known value enabling higher frequency (greater than 3GHz) devices to be obtained using an alumin ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
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