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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. The Characterization and Mitigation of Radiation Effects on Nano-technology Microelectronics

    SBC: SCIENTIC INC            Topic: DTRA121002

    The ultimate goal of this effort is the development of advanced radiation hardened material systems and technology solutions for implementation into both silicon and compound semiconductor technologies at the nanotechnology feature sizes through the use of a gridded capacitor research methodology. To accomplish this, our team proposes to identify, fabricate, and electrically characterize both pre ...

    SBIR Phase I 2012 Department of DefenseDefense Threat Reduction Agency
  2. The Characterization and Mitigation of Radiation Effects on Nano-technology Microelectronics

    SBC: Defense Electronics Corporation            Topic: DTRA121002

    Defense Electronics Corporation (DEC) proposes an innovative radiation hardened by design (RHBD) and reliability improvement solution for silicon, III-V compounds (e.g. SiGe, SiC, GaN, InP, GaAs,), carbon nanotubes (CNT), and graphene. The method is based on analyzing chip-partitioned quiescent current signatures associated with failure modes common to these process technologies. Furthermore, the ...

    SBIR Phase I 2012 Department of DefenseDefense Threat Reduction Agency
  3. Characterization and Mitigation of Radiation Effects in Nonplanar Nano-technology Microelectronics

    SBC: CFD RESEARCH CORPORATION            Topic: DTRA092001

    Future high-performance integrated circuits in DoD satellite systems will require silicon-on-insulator (SOI) and non-planar nano-technology devices, such as MultiGate Field Effect Transistors (MuGFETs) or FinFETs, which can decrease pattern area of logic circuits below 50% of the conventional planar technologies. However, the single-event-effect (SEE) response of non-planar devices and circuits is ...

    SBIR Phase II 2011 Department of DefenseDefense Threat Reduction Agency
  4. Digital Data Recorder for Gauges in High Speed Weapons During Survivability Testing

    SBC: DYNAMIC SYSTEMS & RESEARCH CORP            Topic: DTRA092014

    The development of a high-shock data recorder for use in projectile penetration and pyrotechnic environments is critical to understanding the loads that warhead systems are exposed to in tactical applications. Data from recorders mounted inside warheads can be used by researchers to measure loads on the warhead, fuze, and explosive fill components as well as validate analytic and computational mo ...

    SBIR Phase II 2011 Department of DefenseDefense Threat Reduction Agency
  5. Weapon Payloads for Bulk Chemical and Biological Agent Neutralization

    SBC: Integrated Solutions for Systems, Inc.            Topic: DTRA092012

    Current offensive solutions to neutralize chem/bio agent facilities rely on blast and/or short-burst high-temperature neutralization but have the potential to produce severe collateral damage via agent release. Our team proposes the Dispersed Energetics Coupled for Optimized Neutralization (DECON) Concept, an alternative concept to perform bulk neutralization of agents. The DECON concept can be ...

    SBIR Phase II 2011 Department of DefenseDefense Threat Reduction Agency
  6. Characterization and Mitigation of Radiation Effects in High-Speed Compound Semiconductor Microelectronics

    SBC: CFD RESEARCH CORPORATION            Topic: DTRA08003

    For ultra high-speed, ultra low-power applications in DoD space and weapons systems, devices and circuits fabricated from III–V semiconductor compounds offer significant advantages over silicon-based technology. However, the uncertainty in single-event-effect (SEE) response of compound semiconductor technologies forces the use of empirically-based hardening techniques with penalties in increased ...

    SBIR Phase II 2009 Department of DefenseDefense Threat Reduction Agency
  7. Characterization and Mitigation of Radiation Effects in Quantum Dot Based Nanotechnologies

    SBC: CFD RESEARCH CORPORATION            Topic: DTRA082001

    For applications in DoD satellite systems, devices based on novel nanomaterials offer significant advantages over traditional technologies in terms of light-weight and efficiency. Examples of such novel devices include quantum dot (QD) based solar cells, photodetectors, radars and sensors. However, the response of these devices to radiation effects is not well understood, and radiation effects mod ...

    SBIR Phase I 2009 Department of DefenseDefense Threat Reduction Agency
  8. Inexpensive, disposable radiation detectors

    SBC: NANOPTICS, INC.            Topic: DTRA082007

    This proposal concerns the detection of Special Nuclear Materials (SNM) by using large networks of small, inexpensive, and robust gamma detectors. These detectors will be deployed where consistent surveillance would be difficult by any other means, like remote mountain trails. The proposal describes a novel gamma detector that is extremely robust and inexpensive. The new scintillation material is ...

    SBIR Phase I 2009 Department of DefenseDefense Threat Reduction Agency
  9. Radiation Effects Modeling for High Yield, Reliable Integrated Circuits

    SBC: AET, Inc.            Topic: N/A

    The Defense Special Weapons Agency (DSWA) has identified a need to improve the radiation hardness of advanced integrated circuit technologies. To be practical, this must be achieved in a cost effective way. This proposal by AET, Inc. directly addresses these concerns. Specifi-cally, this proposal provides a means to achieve significant advance in radiation hardness of large scale integrated cir ...

    SBIR Phase I 1997 Department of DefenseDefense Threat Reduction Agency
  10. Nuclear Weapons Effects Phenomenology

    SBC: Applied Physics Technologies            Topic: N/A

    The nuclear weapons community has traditionally focused on the next generation or level of weapon capability complimented by gathering and analysis of actual test data. Now, with the cessation of actual weapons testing, there is an increased need to use the actual test data in modeling techniques to better understand the phenomenology and potential effects of nuclear weapons. The first phase of ...

    SBIR Phase I 1997 Department of DefenseDefense Threat Reduction Agency
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