Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Radiation Effects Modeling for High Yield, Reliable Integrated Circuits

    SBC: AET, Inc.            Topic: N/A

    The Defense Special Weapons Agency (DSWA) has identified a need to improve the radiation hardness of advanced integrated circuit technologies. To be practical, this must be achieved in a cost effective way. This proposal by AET, Inc. directly addresses these concerns. Specifi-cally, this proposal provides a means to achieve significant advance in radiation hardness of large scale integrated cir ...

    SBIR Phase I 1997 Department of DefenseDefense Threat Reduction Agency
  2. Separation of Carrier Lifetime from Interface Recombination Velocity

    SBC: INTERFACE STUDIES, INC.            Topic: N/A

    This Small Business Innovation Research Phase I project will separate minority-carrier lifetime measurements on Silicon-on-Insulator (SOI) wafers. We have already implemented an effective carrier lifetime measurement to characterize SOI samples as thin as 50 nm. this proposal will improve our non-invasive probe of the electrical quality of semiconductor wafers to explicityly and separately chara ...

    SBIR Phase I 1996 Department of DefenseDefense Threat Reduction Agency
  3. CALIFORNIUM-252 SYSTEM FOR SINGLE EVENT UPSET TESTING OF MICROELECTRONICS.

    SBC: InterScience, Inc.            Topic: N/A

    ADVANCES IN ELECTRONIC DEVICE TECHNOLOGY HAVE LED TO INCREASED PACKING DENSITIES WHILE POWER CONSUMPTION HAS DROPPED. IN GENERAL, THIS TREND IS BENEFICIAL TO AVIONICS AND SPACE APPLICATIONS EXCEPT THAT A NEW FAILURE MODE HAS ACCOMPANIED THIS MINIATURIZATION. IN HIGH ENERGY PARTICLE ENVIROMENTS, SUCH AS ENCOUNTERED IN SPACE, MICROELECTRONIC DEVICES HAVE BEEN SHOWN TO BE SUSCEPTIBLE TO TRANSIENT OR ...

    SBIR Phase I 1991 Department of DefenseDefense Threat Reduction Agency
  4. EXTRINSIC PHOTOCONDUCTIVITY SWITCHES USING CVD DIAMOND

    SBC: Vactronic Laboratory Equip Inc            Topic: N/A

    EXTRINSIC PHOTOCONDUCTIVITY SEMICONDUCTOR SWITCHES (PCSS) BASED ON CVD DIAMOND-FILM (DF) HAS BEEN DEVELOPED. DIAMOND MATERIAL POSSESSES SEVERAL ADVANTAGES SUCH AS HIGH THERMAL CONDUCTIVITY AND HIGH BREAKDOWN VOLTAGES. THE PCSS BASED ON CVD DIAMOND CAN BE SUPERIOR THAN ITS COUNTERPARTS (GAAS OR SI) BY EXPLOITING THESE ADVANTAGES. CONVENTIONAL PCSS'S BASED ON GAAS SUFFER FROM PROBLEMS SUCH AS THERMA ...

    SBIR Phase I 1991 Department of DefenseDefense Threat Reduction Agency
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