Award Data

Master artwork for Air Force systems is traditionally delivered on polyester-based mylar film. This film tends to degrade over time, even when stored in climate-controlled facilities. In addition, drawings must be digitized before circuit boards can be manufactured, which is an expensive and time consuming step. A reliable and repeatable artwork conversion process is needed.This project will pe ...

The Acoustech Corporation as the prime contractor and the Pennsylvania State University - Applied Research Labc-atory as the subcontractor propose to design, manufacture, and test an underwater acoustic intensity probe containing a geophone and two-hydrophones encased in a neutrally buoyant package. The results of this proposed effort are anticipated to be highly successful since the researc ...

The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for ...

Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices, contacts and interconnect materials, be ...

116 High Brightness LEDs based on the (Al, Ga,In)N Materials System--Advanced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810-4131; Dr. Karim Boutros, Principal Investigator Dr. Duncan W. Brown, Business Official DOE Grant No. DE-FG02-97ER82319 Amount: $75,000 Based on a combination of physical, electronic and optical properties, the semiconductor materials system (aluminum, g ...

The III-V nitrides, (Al, In, Ga)N, are promising materials for high temperature, high power and high frequency devices due to the wide bandgaps, high electron saturation velocity and high electronic mobility transistor (HEMT) structures available in this alloy system. These devices would find wide-spread commercial use as power amplifiers in base station transmitters for personal communications ...

Commercially viable silicon carbide device manufacturing processes depend on an ability to grow'low defect density epitaxial layers. Low defect density epitaxial layers start with pristine SiC substrate surfaces. Epi-ready pristine SiC surfaces are not commercially available. The results of this-programme should remedy this. In Phase I we will demonstrate a cost-effective, reproducible ex-situ sur ...

Next generation power electronic systems for military aircraft will require capacitors with reliable performance at temperatures from -55 up to 300 degrees C and beyond for filters, power converters and other control circuitry. Thin film integrated passive devices with lower dissipation and electrical leakage will also be needed, especially at high frequencies. Thin films have inherently high bre ...

Silicon carbide (SiC) is an ideal semiconductor material for high temperature, high frequency, and high power electronic devices. A SiC technology analogous to silicon - on -insulator (SOI) will be feasible if a suitable dopant precursor and epitaxial growth technique to produce semi-insulating SiC can be developed. Vanadium is an attractive dopant for the formation of semi-insulating SiC. In Phas ...

Metal-ferroelectric-semiconductor field effect transistors (MFS-FETs) have a can be used as nonvolatile memory devices. The primary ferroelectric materials for these devices are perovskite oxides such as lead zirconium titanate (PZT) and strontium bismuth tantalate (SBT). These materials contain highly mobile elements (Pb and Bi) that can interact with silicon at process temperatures and lead to a ...