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INADEQUATE STARTER FEEDS SEVERELY HOLD BACK NEW AQUACULTURE ENTERPRISES SUCH AS PRESENT ATTEMPTS TO RAISE FISHES WHOSE LARVAE DEVELOP FROM SMALL EGGS AND HAVE VERY "DIFFICULT" FOOD REQUIREMENTS. INERT LARVAL FEEDS HAVE NOT SUCCESSFULLYELIMINATED THE STRICT DEPENDENCY ON NATURAL FORAGE DURING THE CRITICAL POST-LARVAL STAGE AFTER YOLK ABSORPTION AND BEFORE THE DEVELOPMENT OF A DIGESTIVE SYSTEM WITH ...

MCNC PROPOSES A FEASIBILITY STUDY AND EVALUATION OF THREE PROMISING APPROACHES TO THE FABRICATION OF SURFACE TEST STRUCTURES ON SILICON. SURFACE FEATURES ON THE FIRST STRUCTURE WILL BE PRODUCED BY CONTROLLABLY ETCHING THERMALLYGROWN OXIDES. FEATURES ON THE SECOND WILL BE MADE BY ETCHING PIEZOELECTRIC THIN FILMS. USING THE PIEZOELECTRIC FILM AS PART OF A CAPACITOR, STEP-HEIGHT CAN BE VARIED AND PRO ...

PLEX Corporation will demonstrate a highly efficient laser emitting light at 1100nm in the near infrared. Technical issues in laser design will be resolved in Phase I, with a full lasing test experiment in Phase 2. This laser candidate has potentially a 25% electrical efficiency and can, in principle, be scaled to high power levels. Cutting and welding applications are foreseen in the industrial e ...

The objective of proposed work is to demonstrate that AlN single crystals are suitable for nonlinear optical (NLO) and electro-optic (EO) applications in the visible and UV spectral ranges. AlN is a promising material for photonic applications that requireUV-compatibility, mechanical, chemical and optical robustness, as well as radiation hardness. As a non-centrosymmetric material, AlN has a 2nd o ...

Through the proposed research, we plan to demonstrate the feasibility of the ammonothermal growth method for commercial production of high quality GaN crystals. This will be achieved by fabrication of a classical autoclave especially designed for thisprocess, demonstration of adequate solubility, and demonstration of transport and re-deposition of the material on GaN seeds. The ammonothermal cry ...

This program will demonstrate high-performance GaN microelectronic devices for X-band radar applications by using novel device designs and single crystal gallium nitride substrates. FETs for power amplifiers will benefit from lower defects resulting fromgrowth on a native GaN substrate, improved device design, including features such as gate recess and passivation layers, and device cooling. The m ...

Kyma Technologies will use its proprietary manufacturing technique for growth of bulk GaN doped substrates. We propose to develop gallium nitride (GaN) substrates with n- and p- type dopants for device fabrication. Attempts to grow low defect densitygallium nitride (GaN) thin films on substrates such as sapphire and silicon carbide (SiC) have had limited success. As such, homoepitaxial GaN thin ...

Gallium nitride crystal growth has gained more attention as the need for a homoepitaxial substrate for GaN devices has increased. Kyma Technologies proposes to develop an advanced manufacturing process capable of growing single crystal GaN at growth ratesin excess of 1mm/hr. 50mm single crystal GaN substrates produced by Kyma Technologies will be used as the seed material to ensure thermal and l ...

Existing T/R modules are based on gallium arsenide (GaAs) transistors and power amplifiers. Current and future XBRs would benefit from improved resolution, enhanced discrimination, and increased power. Significant XBR performance enhancement can beachieved by developing T/R modules that incorporate gallium nitride (GaN) -based power amplifiers. High-performance GaN-based devices, such as HEMTs, h ...

Failure of solid rocket motor propellants due to structural or chemical breakdown from either manufacturing or aging effects can result in potential failure of the rocket and significant maintenance requirements. Defects in rocket propellants are asignificant issue particularly for new propellants, which may suffer from short experiential histories, frequently unknown lifecycle parameters and the ...