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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. MONOLITHIC GAAS LIGHT-EMITTING DIODES ON SILICON VLSI CIRCUITS ELEMENTS

    SBC: ASTROPOWER, INC.            Topic: N/A

    OPTOELECTRONIC SOURCES, INTEGRATED AS MONOLITHIC ELEMENTS ON SILICON VLSI CHIPS, OFFER IMPORTANT ADVANTAGES IN THE TRANSMISSION OF INFORMATION WITHIN THE CHIP OR BETWEEN CHIPS IN ADVANCED COMPUTER SYSTEMS. THE SPEED OF OPTICAL-INTEGRATED VLSI DEVICES IS EXPECTED TO BE CONSIDERABLY HIGHER THAN EQUIVALENT VLSI WITH METALLIC INTERCONNECTS, DUE TO ABSENCE OF THE RC DELAY INHERENT IN THE METALLIC CONDU ...

    SBIR Phase II 1987 Department of DefenseDefense Advanced Research Projects Agency
  2. HIGH-EFFICIENCY THIN-FILM SILICON-ON-GAP SOLAR CELL FOR IMPROVED RADIATION RESISTANCE

    SBC: ASTROPOWER, INC.            Topic: N/A

    THE ULTIMATE HIGH-EFFICIENCY CRYSTALLINE SILICON SOLAR CELL DESIGN CONSISTS OF A THIN FILM OF ELECTRICALLY-ACTIVE SILICON EPITAXIALLY GROWN ON AN OXIDE-OVERCOATED, INFRARED-TRANSPARENT GALLIUM PHOSPHIDE (GAP) SUBSTRATE. IN ADDITION TO HIGH CONVERSION EFFICIENCY AND INTRINSIC RADIATION RESISTANCE DUE TO THE THIN ACTIVE LAYERS, THIS NOVEL DESIGN HAS SEVERAL UNIQUE PERFORMANCE ENHANCING FEATURES. THE ...

    SBIR Phase II 1987 Department of DefenseAir Force
  3. THIN CRYSTALLINE SILICON FILM PHOTOVOLTAIC SOLAR CELLS AND ARRAYS ON FLEXIBLE SUBSTRATES

    SBC: ASTROPOWER, INC.            Topic: N/A

    SOLAR CELLS ARE BEING FABRICATED USING THIN FILMS OF SILICON ON INEXPENSIVE, FLEXIBLE CLOTH SUBSTRATES. PHOTOVOLTAIC DEVICES FABRICATED WITH THESE STRUCTURES CAN DEMONSTRATE THE HIGH PERFORMANCE OF CRYSTALLINE SILICON WITH THE LIGHT WEIGHT OF THIN FILM SOLAR CELLS. THE RESULT IS A SOLAR CELL THAT HAS APPLICATIONS WHEREVER A LIGHTWEIGHT POWER SOURCE IS NEEDED. THE RADIATION TOLERANCE OF THIN CRYSTA ...

    SBIR Phase II 1992 Department of DefenseMissile Defense Agency
  4. AlGaP/GaP Heterostructure Ultraviolet Detector

    SBC: ASTROPOWER, INC.            Topic: N/A

    AstroPower is developing a highly sensitive UV detector based on epitaxial AlGaP/GaP heterostructures, a promising new material system for ultraviolet detectors. Detecting ultraviolet light is important to spectrophotometry, astronomy, high-energy physics, medicine, UV curing, photoresist exposure, and chemical processes. The large bandgap and crystalline quality of gallium phosphide will provide ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  5. Large Area Thin Film Silicon Carbide Using Zone Melt Synthesis and LPE

    SBC: ASTROPOWER, INC.            Topic: N/A

    AstroPower is developing a new process for the growth of large area, thin film 3C-SiC using a proprietary deposition technique followed by liquid phase epitaxy (LPE). Successful development of the growth process will provide high quality, thin film SiC in typical silicon wafer areas, allowing compatibility with existing silicon circuit foundries for devices where SiC is the material of choice. New ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  6. AlGaInP/GaAs 27% Efficient Top Solar Cells

    SBC: ASTROPOWER, INC.            Topic: N/A

    AstroPower will develop a two-junction monolithic tandem solar cell composed of (AlxGa1-x)0.51 In(0.49)P, which is lattice matched to GaAs, as the top cell in a three-junction, two-terminal tandem solar cell. This new tunable bandgap Al-Ga-In-P material is capable of current matching in a two-junction monolithic tandem solar cell two-terminal design of the Al-Ga-In-P over GaAs yielding a best case ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  7. Laser and LED Arrays for Optical Computing

    SBC: ASTROPOWER, INC.            Topic: N/A

    1 New concepts in optical computing and optical interconnects require hardware developments of generic, compact, multi-element LED source array. A two dementional array of individually-addressable Light-emitting Diode optical emitters will be developed. An innovative CVD/LPE heteropitaxy technique will be employed for the monolithic integration of high-speed-surface-emitting AlGaAs/GaAs LEDs on si ...

    SBIR Phase I 1992 Department of DefenseNavy
  8. LIGHTWEIGHT, LIGHT-TRAPPED, THIN GAAS SOLAR CELL FOR SPACECRAFT APPLICATIONS

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force
  9. ELECTRONIC GAAS-ON-SILICON MATERIAL FOR ADVANCED HIGH-SPEED OPTOELECTRONIC DEVICES

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1987 Department of DefenseMissile Defense Agency
  10. GaP ZnS for Blue Light Emitting Diodes

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
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