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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Ion-Implanted 2-D MESFET Technology for Wireless Communications
SBC: Advanced Device Technologies, Topic: N/AThis Phase I project has two primary objectives. The first objective is to evaluate the feasibility of a fully ion implanted fabrication process based on the heterodimensional 2-D MESFET. The new device, the 2-D JFET, will have p+ ion implanted sidegates which laterally modulate a thin, highly doped n-type conducting channel. The 2-D JFET should have excellent high speed, low power characteristics ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
LASER ALLOYING OF PLASMA-DEPOSITED COATINGS FOR PROTECTION AGAINST ATOMIC OXYGEN
SBC: American Research Corporation of Virginia Topic: N/AN/A
SBIR Phase I 1988 Department of DefenseMissile Defense Agency -
Self-Monitoring Surveillance System for Prestressing Tendons
SBC: Construction Technology Topic: N/AN/A
SBIR Phase I 1995 Nuclear Regulatory Commission -
Comprehensible Descriptions for Fast Processing of Image Data
SBC: DATAMAT SYSTEMS RESEARCH, INC. Topic: N/AN/A
SBIR Phase I 1996 Department of DefenseMissile Defense Agency -
INFRARED SENSOR AND IMAGING SYSTEM
SBC: EMPIRICAL TECHNOLOGIES CORPORATION Topic: N/AN/A
SBIR Phase I 1988 Department of DefenseMissile Defense Agency -
Ionic Self Assembled Monolayer (ISAM) Processes for Electronic Materials and Devices
SBC: LUNA INNOVATIONS INCORPORATED Topic: N/ANovel ionic self-assembled monolayer (ISAM) processes for the fabrication of advanced electronic materials and devices will be developed through this program. Revolutionary ISAM methods to create nanostructured multi-layer inorganic/organic thin-films offer major advantages over conventional manufacturing processes, since the process is simple, low-cost and environmentally friendly in that no vola ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Protective Coatings for Optical System Components Fabricated Using Ionic Self Assembled Monolayer (ISAM) Processes
SBC: LUNA INNOVATIONS INCORPORATED Topic: N/AF&S and Virginia Tech will cooperatively develop high performance protective ionic self-assembled monolayer (ISAM) organic/inorganic coatings for space-based optical and structural components, and work with Litton to upscale practical coating manufacturing. Revolutionary ISAM methods of creating multi-layer protective nanopartwcle films offer major advantages over con-ventional coating processes, ...
SBIR Phase I 1997 Department of DefenseMissile Defense Agency -
Si Wires in Silicon-On-Insulator Configuration
SBC: GRATINGS INCORPORATED Topic: N/AWe propose a systematic investigation of crystalline Si structures as their dimensions are reduced to quantum sizes (5-10 nm). For convenience, we have chosen Si on insulator (SOI) material for optical and electrical characterization. Our nanofabrication approach relies on simple laser interferometric lithography techniques that are uniquely adaptable to large area manufacturing. Suitable applic ...
SBIR Phase I 1995 Department of DefenseMissile Defense Agency -
VALIDATION & TESTING OF THE VAM2D COMPUTER CODE
SBC: Hydrogeologic Inc. Topic: N/AN/A
SBIR Phase I 1988 Nuclear Regulatory Commission -
Development of a Performance Assessment Process Controller
SBC: Innovative Tech. Solutions Topic: N/AN/A
SBIR Phase I 1995 Nuclear Regulatory Commission