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SBC: CFD RESEARCH CORPORATION Topic: DTRA16A003
Cost-effective application of advanced commercial electronics technologies in DoD space systems requires early development of radiation-hardened-by-design (RHBD) techniques, and use of simulations is critical to the efficiency of this process. CFDRC has developed an integrated, mixed-mode simulation approach allowing their NanoTCAD device physics simulator to interface with commercial circuit simu ...STTR Phase I 2017 Department of DefenseDefense Threat Reduction Agency
SBC: NANOSD, INC. Topic: DEFOA0001429
NanoSD, Inc. with its partners will develop a transparent, nanostructured thermally insulating film that can be applied to existing single-pane windows to reduce heat loss. To produce the nanostructured film, the team will create hollow ceramic or polymer nanobubbles and consolidate them into a dense lattice structure using heat and compression. Because it is mostly air, the resulting nanobubble s ...STTR Phase II 2016 Department of EnergyARPA-E
Development of powder bed printing (3DP) for rapid and flexible fabrication of energetic material payloads and munitionsSBC: MAKEL ENGINEERING, INC. Topic: DTRA16A001
This program will demonstrate how additive manufacturing technologies can be used with reactive and high energy materials to create rapid and flexible fabrication of payload and munitions. Our primary approach to this problem will be to use powder bed binder printing techniques to print reactive structures. The anticipated feedstock will consist of composite particles containing all reactant spe ...STTR Phase I 2016 Department of DefenseDefense Threat Reduction Agency
SBC: RELIABLE MICROSYSTEMS LLC Topic: DTRA16A003
Establish a radiation-aware analysis capability in a commercial EDA design flow that will enable first-pass success in radiation-hardened by design (RHBD) for DoD ASICs in much the same way that existing EDA design suites ensure first pass functionality and performance success of complex ASICs destined for commercial applications. Layout-aware, calibrated single-event radiation models that captur ...STTR Phase I 2016 Department of DefenseDefense Threat Reduction Agency
SBC: ASR Corporation Topic: DTRA16A004
A compact laser driver will allow photoconductive semiconductor switches to be used in small EMP simulator "building blocks" (EMPBB). Combined with a battery powered on-board pulsed power system, these EMPBBs will allow the construction of flexible EMP test facilities with nothing more than a single fiber optic timing connection to each EMPBB.STTR Phase I 2016 Department of DefenseDefense Threat Reduction Agency
SBC: SCIENTIFIC APPLICATIONS & RESEARCH ASSOCIATES, INC. Topic: DTRA16A004
For effective protection against EMP and HPM threats, it is important to understand the physics of the threats, and also to quantify the effects they have on electrical systems. EMP and HPM vulnerability testing requires delivery of high peak power and electric fields to distant targets. The most practical solution to simulate such environments is to develop a modular, optically-isolated MV-antenn ...STTR Phase I 2016 Department of DefenseDefense Threat Reduction Agency
Infectious Disease Diagnostics and Differentiation of Viral vs. Bacterial Infections for Point of Care ApplicationsSBC: GENECAPTURE, INC. Topic: CBD15C001
The modern warfighter faces the constant threat of endemic infections, multi-drug resistant bacteria and Biological Warfare Agents. In order to provide accurate front-line treatment that will curtail the overuse of antibiotics, a rapid and robust moleculaSTTR Phase I 2016 Department of DefenseOffice for Chemical and Biological Defense
SBC: IBEAM MATERIALS, INC. Topic: 1
GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...STTR Phase I 2013 Department of EnergyARPA-E
SBC: IBEAM MATERIALS, INC. Topic: 1
GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...STTR Phase II 2014 Department of EnergyARPA-E
SBC: SIXPOINT MATERIALS, INC. Topic: N/A
SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...STTR Phase I 2014 Department of EnergyARPA-E