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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Vertical GaN Substrates

    SBC: SIXPOINT MATERIALS, INC.            Topic: DEFOA0000941

    SixPoint Materials will create low-cost, high-quality vertical gallium nitride (GaN) substrates using a multi-phase production approach that employs both hydride vapor phase epitaxy (HVPE) technology and ammonothermal growth techniques to lower costs and maintain crystal quality. Substrates are thin wafers of semiconducting material needed for power devices. In its two-phase project, SixPoint Mate ...

    STTR Phase II 2017 Department of EnergyARPA-E
  2. Novel Mixed-mode TCAD-Commercial PDK Integrated Flow for Radiation Hardening By Design

    SBC: CFD RESEARCH CORPORATION            Topic: DTRA16A003

    Cost-effective application of advanced commercial electronics technologies in DoD space systems requires early development of radiation-hardened-by-design (RHBD) techniques, and use of simulations is critical to the efficiency of this process. CFDRC has developed an integrated, mixed-mode simulation approach allowing their NanoTCAD device physics simulator to interface with commercial circuit simu ...

    STTR Phase I 2017 Department of DefenseDefense Threat Reduction Agency
  3. Epitaxial GaN on Flexible Metal Tapes for Low-Cost Transistor Devices

    SBC: IBEAM MATERIALS, INC.            Topic: DEFOA0000941

    GaN-based devices are the basis of a variety of modern electronics applications, especially in optoelectronics and high-frequency / high-power electronics. These devices are based on epitaxial films grown on single-crystal wafers. The single-crystal wafer substrates are limiting because of their size, expense, mechanical properties and availability. If one could make GaN-based devices over large a ...

    STTR Phase II 2016 Department of EnergyARPA-E
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