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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

Displaying 11 - 16 of 16 results
 
  • Record 1 TO 16

  1. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency

  2. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency

  3. Novel heterojunction diodes for High Power Electronics

    SBC: PHOTRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency

  4. PROPULSION MATERIALS MODELING TO IMPROVE PERFORMANCE AND REDUCE COST

    SBC: MATERIALS RESEARCH & DESIGN INC            Topic: MDA05T002

    MDA is developing materials for several applications including hypersonic missiles, ma-neuvering reentry vehicles, advanced solid rocket motors, and divert and attitude control sys-tems. All of these applications employ components that must operate at temperatures above 3000°F. Viable structural materials for these conditions can be loosely grouped as graphite, ce-ramics (e.g. oxides, carbides) ...

    STTR Phase I 2005 Department of DefenseMissile Defense Agency

  5. Radiation Hard, Nonvalatile Magnetic RAM Using Novel Magnetic Tunneling-Junction Device on Silicon Semiconductor

    SBC: Spinix Corporation            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency

  6. Stratospheric Electrical Environments Applicable To Photovoltaic Arrays On HAA Platforms

    SBC: LIGHTNING TECHNOLOGIES, INC.            Topic: MDA04T008

    The objective of this program is to characterize the upper atmosphere electrical environment so that the effects of this environment on high altitude airships (HAA) and other platforms intending to operate in this environment can be determined, and protection methods developed. This includes transient luminous events (TLEs), such as red sprites and blue jets and their associated electrical propert ...

    STTR Phase II 2005 Department of DefenseMissile Defense Agency
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