Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Data Driven Damage Diagnosis and Prognosis

    SBC: Migma Systems Inc.            Topic: N/A

    This proposal is aimed at demonstrating the applicability of a method for data-based, online, real-time monitoring of machine health state and predicting imminent failures. The data driven prognostic system will be based on a new, general state-space basedapproach to parameter tracking in dynamical systems. This method is applicable to systems where the parameters drift at a slower rate than the o ...

    STTR Phase I 2003 Department of DefenseMissile Defense Agency
  2. Advanced Chemical Iodine Lasers

    SBC: Physical Sciences Inc.            Topic: N/A

    The team of Physical Sciences Inc. (PSI) and Ohio State University (OSU) proposes to develop and test a novel method for electrical production of singlet molecular oxygen for application to an atomic iodine transfer laser. OSU has developed a supersonic,low pressure discharge and applied it to flows of nitrogen with efficient excitation of the gas. They propose to use this method that tailors th ...

    STTR Phase I 2003 Department of DefenseMissile Defense Agency
  3. Data Driven Prognostics

    SBC: Pulsemetrics, LLC            Topic: N/A

    The Airborne Laser (ABL) weapon system is one key part of a Department of Defense (DoD) approach to defending against ballistic missiles. The ABL is interested in developing a prognostic system that is able to provide an accurate picture of faults,component degradation, and predictive indicators of failures that will allow the operators to take preventive maintenance actions to avoid costly or ca ...

    STTR Phase I 2003 Department of DefenseMissile Defense Agency
  4. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  8. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  9. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  10. Radiation Hard, Nonvalatile Magnetic RAM Using Novel Magnetic Tunneling-Junction Device on Silicon Semiconductor

    SBC: Spinix Corporation            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
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