Award Data

Antimony containing III-V semiconducting compounds are particularly attractive for the fabrication of a wide variety of electronic and optoelectronic devices such as photo detectors operating in the long wave infrared wavelength (12-32µm) range. The production of epi quality GaSb wafers still remains one of the important problems for rapid commercialization of GaSb devices. In Phase I effort, we ...

Propose development of a human-in-control (HIC) modeling capability that can: (1) represent the breadth of operator decision-making processes across missile defense elements, (2) scale to deliver the appropriate level of fidelity, and (3) be extensible to future operator needs. To provide this HIC modeling capability, we propose to develop and evaluate a full-scope prototype of Modeling Operato ...

An ultra-high speed visible and near-infrared (VNIR) hyperspectral radiometric temperature imager will be developed in this program. The instrument is based on a high speed hyperspectral imager spanning the wavelength range 0.4-0.9 micron and providing hyperspectral data-cubes at rates of 13,500 Hz or faster. The high speed spatial imagery provides trajectory information to determine size and spe ...

Current state-of-the-art infrared focal plane arrays are based on HgCdTe grown on bulk CdZnTe substrates. The use of Si-based substrates would eliminate a number of drawbacks related to the HgCdTe/CdZnTe system and permit larger formats. We have developed growth protocols that produce material with good crystal quality for such a highly mismatched heteroepitaxial system. Double crystal rocking c ...

Hydrogen isotopes have been shown to reduce the electrical effects of various semiconductor defects. Specifically, monoatomic hydrogen and deuterium passivate the electrical activity of defects such as dislocations in long-wavelength HgCdTe grown on Si. We propose a novel method of controlling the intake of hydrogen in HgCdTe IRFPAs by using the H2/He plasma afterglow formed by flowing plasma-gene ...

Current state-of-the-art infrared focal plane arrays (IRFPAs) are based on HgCdTe material epitaxially grown on bulk CdZnTe substrates. The size of the IRFPAs is limited by the size of the available CdZnTe substrates and the thermal mismatch between CdZnTe and the Si readout circuit, which misaligns the photodiode array with respect to the circuit during heating and cooling cycles. Having HgCdTe ...

An innovative, super-miniature, fast-switching array-based photonic time delay device is being developed for the active electronically scanned-array (AESA) MDA and Navy radars. The design is based on the fast electro-optic effect, the super miniature fiber-lens collimation array, and the existing WDM photonic true time delay technologies. In Phase I Agiltron has successfully demonstrated the core ...

The goal of this program is to develop high-speed interceptor communications solutions that are hardened to space and nuclear radiation, including high altitude nuclear explosions (HANEs). As part of this program, AET will specifically investigate the use of advanced diamond technology for communications applications. The approach of AET, Inc. is to first identify a communication system architectu ...

Cheaper and higher performance infrared sensors are needed for next generation ballistic missile defense programs. Type II InAs/GaSb superlattices represent the most promising material system capable of delivering a more manufacturable and affordable focal plane array technology than the current technology, while at the same time exhibiting similar or better performance. At present, one of the m ...

It is proposed to develop, model, and demonstrate composite case materials with sympathetic responses to slow cookoff. In phase II, the proposed study will focus upon conducting subscale SCO testing on composite case materials and validate a physics based modeling and simulation tool. Subscale motor case dimensions will be analogue to a specific MDA rocket booster.