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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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New Broad Band Rare-Earth-Doped Glasses For Optical Fiber Communications
SBC: KIGRE, INC. Topic: N/AKigre is developing new scalable high gain broad band rare earth doped laser oscillator/amplifier glass materials & diode pump architectures in support of high energy and high power laser applications. What's new, exciting and different about Kigre's laser glass materials and constructs is the ability to efficiently store and extract 1000-10,000x more laser power from ultra-short gain lengths and ...
STTR Phase I 2004 Department of DefenseDefense Advanced Research Projects Agency -
New Broad Band Rare-Earth-Doped Glasses For Optical Fiber Communications
SBC: KIGRE, INC. Topic: BMDO01T001Kigre is developing new scalable high gain broad band rare earth doped laser oscillator/amplifier glass materials & diode pump architectures in support of high energy and high power laser applications. What's new, exciting and different about Kigre's laser glass materials and constructs is the ability to efficiently store and extract 1000-10,000x more laser power from ultra-short gain lengths and ...
STTR Phase II 2004 Department of DefenseDefense Advanced Research Projects Agency -
Differentiated Placement Quality Control Mode
SBC: Ryll International Topic: N/AThe provision of quality-differentiated instruction requisite for educational success is dependent on the implementation of timely differentiated placement procedures. Studies indicate that despite a plethora of “research based” educational tools and substantial funding, “language minority” (LM) students who fail to successfully exit enrichment programs for ELLs within three to four years ...
SBIR Phase I 2006 Department of Education -
OUTPUT AND STABILITY OF GRAPHITE FIBER THERMOCOUPLERS
SBC: Sandlappers Topic: N/AA UNIQUE THERMOCOUPLE FOR MEASURING TEMPERATURES ABOVE THE TUNGSTEN/TUNGSTEN-RHENIUM RANGE OF 2400 DEG C HAS BEEN DESCRIBED IN OUR COMPANY'S U.S. PATENT 4,650,920. THE USE OF THIS GRAPHITE FIBER THERMOCOUPLE OFFERS MANY ADVANTAGES IN TESTING OF MATERIALS AT HIGH TEMPERATURES AS COMPARED TO RADIATION SENSORS. TO BE COMMERCIALLY SUCESSFUL THIS GRAPHITE FIBER THERMOCOUPLE MUST HAVE A REPRODUCIBILE AN ...
SBIR Phase I 1988 Department of DefenseDefense Advanced Research Projects Agency -
AlInGaN-based Deep Ultraviolet Laser Diode Over Bulk AlN Substrates
SBC: Sensor Electronic Technology, Inc. Topic: N/AWe propose to develop technology for manufacturing deep ultraviolet (DUV) semiconductor Laser Diode (LDs) emitting in the spectral range of 250 nm. Blue and near UV (wavelength > 370 nm) light emitters are based on GaN/InGaN material system. In Phase I, wewill demonstrate LD structures with dislocation density below 107 cm-2, electroluminescence peak at 250 nm and stimulated emission at 250 nm und ...
SBIR Phase I 2002 Department of DefenseDefense Advanced Research Projects Agency -
AlInGaN-Based Deep Ultraviolet Laser Diode Over Bulk AlN Substrates
SBC: Sensor Electronic Technology, Inc. Topic: SB022043To develop technology for manufacturing of deep ultraviolet (DUV) semiconductor Laser Diode (LDs) emitting in the spectral range of 250nm.
SBIR Phase II 2004 Department of DefenseDefense Advanced Research Projects Agency -
High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistor with InGaN as the RIE Etching Stop Layer
SBC: Sensor Electronic Technology, Inc. Topic: N/ASensor Electronic Technology, Inc. proposes a radically different approach for pushing the GaN HEMT performance above the 200 GHz range. In this approach, called Drain Gate Recess, the shape of the recessed gate is such that the gate metal is CLOSER to the channel near the drain edge of the channel. The result is a variation of the device threshold voltage along the channel that makes the electr ...
SBIR Phase I 2005 Department of DefenseDefense Advanced Research Projects Agency -
High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistor with InGaN as the RIE Etching Stop Layer
SBC: Sensor Electronic Technology, Inc. Topic: MDA03034Sensor Electronic Technology, Inc. proposes a radically different approach for pushing the GaN HEMT performance above the 200 GHz range. In this approach, called Drain Gate Recess, the shape of the recessed gate is such that the gate metal is CLOSER to the channel near the drain edge of the channel. The result is a variation of the device threshold voltage along the channel that makes the electr ...
SBIR Phase II 2005 Department of DefenseDefense Advanced Research Projects Agency -
Conundrum: A Project to Computerize the Comprehensive
SBC: The Evans Associates Topic: N/ACSMP is an exciting K-6 math program, designated as an "exemplary educational program that works¿ by the U.S. Department of Education, which funded its development, evaluation, and dissemination. Its spiral, problem solving approach uses picture languages, abaci, and technically challenging games. Simple problems subtly introduce sophisticated concepts. While class and teacher-student intera ...
SBIR Phase I 1997 Department of Education -
Web-Based Training for Health Teachers and Other School Personnel for the Enforcement of Title IX and Prevention of Sexual Harassment
SBC: The Providence Group Topic: N/AN/A
SBIR Phase I 2001 Department of Education