You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. SURFACE MORPHOLOGY OF SILICON ON INSULATOR FILMS PREPARED BY ZONE-MELTING RECRYSTALLIZATION

    SBC: Kopin Corporation            Topic: N/A

    RESEARCH IS DIRECTED AT TECHNIQUES TO IMPROVE SURFACE MORPHOLOGY IN SILICON ON INSULATOR (SOI) WAFERS PREPARED BY ZONE MELTING RECRYSTALLIZATION (ZMR). THE THREE AREAS OF PRIMARY IMPORTANCE IN IMPROVING THE SURFACE MORPHOLOGY OF ZMR PROCESSED WAFERS ARE: SLIP, BOW AND WARP, AND SURFACE SMOOTHNESS. SLIP IS CAUSED BY THERMALLY INDUCED STRESS THAT RESULTS FROM THE TEMPERATURE GRADIENT IN THE MELT ZON ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  2. DUAL SUSCEPTOR ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION FOR PRODUCTION OF HETEROSTRUCTURE MATERIALS

    SBC: Kopin Corporation            Topic: N/A

    A PRODUCTION ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR IS BEINGDESIGNED CAPABLE OF DEPOSITING UNIFORM AND ABRUPT LAYERS OF GAAS AND ALGAAS FOR THE NEXT GENERATION OF HETEROSTRUCTURE DEVICES. THESE INCLUDE HIGH ELECTRON MOBILITY STRUCTURES FOR BOTH DIGITAL AND MONOLITHIC MICROWAVE INTEGRATED CIRCUITS, AS WELL AS QUANTUM WELL STRUCTURES FOR OPTICAL COMMUNICATION. THIS DESIGN IS ANTICIPATED TO ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  3. EPITAXIAL GALLIUM-ARSENIDE ON SILICON-ON-INSULATOR WAFERS

    SBC: Kopin Corporation            Topic: N/A

    N/A

    SBIR Phase I 1988 Department of DefenseMissile Defense Agency
  4. HIGH RESOLUTION HIGH SPEED BISTABLE OPTICAL DEVICE FOR OPTICAL COMPUTING APPLICATIONS

    SBC: Optron Systems, Inc.            Topic: N/A

    OPTICAL COMPUTERS ARE RECOGNIZED AS POTENTIALLY USEFUL ELEMENTS IN THE QUEST TO MEET THE INTENSE BATTLE MANAGEMENT COMPUTATIONAL REQUIREMENTS OF THE SDI PROGRAM. CURRENTLY, OPTICAL COMPUTERS ARE GREATLY LIMITED IN PERFORMANCE BECAUSE NO EXISTING NONLINEAR LIGHT MODULATION DEVICE SIMULTANEOUSLY OFFERS FAST OPTICAL SWITCHING WITH HIGH GAMMA (THRESHOLD), HIGH SPATIAL BANDWIDTH, LOW POWER DISSIPATION, ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  5. INTENSIFIED BISTABLE OPTICAL DEVICE

    SBC: Optron Systems, Inc.            Topic: N/A

    OPTICAL COMPUTERS ARE RECOGNIZED AS POTENTIALLY USEFUL ELEMENTS IN THEQUEST TO MEET THE INTENSE BATTLE MANAGEMENT COMPUTATIONAL REQUIREMENTSOF STRATEGIC DEFENSE. CURRENTLY, OPTICAL COMPUTERS ARE GREATLY LIMITED IN PERFORMANCE BECAUSE NO EXISTING NONLINEAR LIGHT MODULATION DEVICE SIMULTANEOUSLY OFFERS FAST OPTICAL SWITCHING WITH THRESHOLD HIGH GAMMA, HIGH SPATIAL BANDWIDTH, LOW POWER DISSIPATION, O ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  6. ELECTROMAGNETIC BEARINGS FOR MINIATURE HIGH SPEED TURBOEXPANDERS IN SPACE-BORNE CRYOCOOLERS

    SBC: CREARE LLC            Topic: N/A

    N/A

    SBIR Phase I 1988 Department of DefenseMissile Defense Agency
  7. PRESSURE CASTING FOR NEAR-NET SHAPE PRODUCTION OF LOW COST GRAPHITE MAGNESIUM SPACE STRUCTURES

    SBC: FOSTER-MILLER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1988 Department of DefenseMissile Defense Agency
  8. COMPACT LIGHTWEIGHT CO2 LASERS FOR STRATEGIC DEFENSE APPLICATIONS

    SBC: Science Research Laboratory, Inc            Topic: N/A

    N/A

    SBIR Phase I 1988 Department of DefenseMissile Defense Agency
  9. LASER PULSE FORMATTING TO REDUCE THERMAL BLOOMING BY AEROSOL VAPORIZATION

    SBC: Science Research Laboratory, Inc            Topic: N/A

    N/A

    SBIR Phase I 1988 Department of DefenseMissile Defense Agency
  10. DEPOSITION OR INP ON SI SUBSTRATES FOR MONOLITHIC INTEGRATION OF ADVANCED ELECTRONICS

    SBC: Spire Corporation            Topic: N/A

    A PROCESS IS BEING DEVELOPED FOR THE HETEROEPITAXIAL GROWTH OF INP ON SILICON SUBSTRATES BY METALORGANIC CHEMICAL VAPOR DEPOSITION. DUE TO ITS ELECTRON SATURATED DRIFT VELOCITY AND RADIATION RESISTANCE, INP ISAN EXCELLENT MATERIAL FOR USE IN HIGH SPEED ELECTRON DEVICES AND SPACEAPPLICATIONS. SILICON IS AN OPTIMAL SUBSTRATE MATERIAL DUE TO THE AVAILABILITY OF HIGH PURITY, LARGE AREA, LOW COST WAFER ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government