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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. GaAs VLSI Readout Electronics for Infrared Focal Plane Arrays

    SBC: Top-Vu Technology, Inc.            Topic: N/A

    GALLIUM ARSENIDE (GaAs) TECHNOLOGY ADVANCES HAVE SHOWN THE CAPABILITY FOR PRODUCING VERY LARGE SCALE INTEGRATED (VLSI) CIRCUITS FOR DIGITAL COMPUTING APPLICATIONS. THE INTENT OF THIS PROJECT IS EXTEND THE GaAs VLSI TECHNOLOGY TO ANALOG READOUT ELECTRONICS FOR THE SDI INFRARED FOCAL PLANE ARRAYS (IRFPA's). THE SDI INFRARED SURVEILLANCE SENSORS AND MISSILE SEEKERS REQUIRE SIGNIFICANT ON-FPA ELECTRON ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  2. Parallel and Pipeline Architecture for Guidance and Navigation GaAs Signal Processors

    SBC: Top-Vu Technology, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseAir Force
  3. APPLICATION OF LOCALIZED VIBRATION AND SMART MATERIALS IN CONTROLLING THE DYNAMIC RESPONSE OF STRUCTURES

    SBC: QUALITY RESEARCH, DEVELOPMENT & CONSULTING, INC.            Topic: N/A

    IN THE TREATMENT OF THE DYNAMIC PROBLEMS OF STRUCTURES, TWO ALTERNATE TESTING METHODS, BASED ON EXTERNAL AND EMBEDDED SENSORS, EXIST IN THE LITERATURE. IF THE SENSORS RESPOND TO THE CHANGES IN THE DYNAMIC CHARACTERISTICS OF THE STRUCTURE, AND/OR THE ENVIRONMENT, THEN THEY ARE REFERRED TO "SMART" STRUCTURES. SMART SENSORS AND SMART MATERIALS HAVE BEEN USED FOR DETECTING STRUCTURAL DAMAGES AND/OR CO ...

    SBIR Phase II 1993 Department of DefenseDefense Advanced Research Projects Agency
  4. SOLID STATE LASER SCANNER FOR LASER ORDNANCE INITIATOR

    SBC: Apa Optics, Inc.            Topic: N/A

    THIS PROPOSAL ADDRESSES THE DEVELOPMENT OF A SOLID STATE LASER SCANNER FOR ROUTING A HIGH ENERGY LASER BEAM AMONG THE FIBER OPTIC ENERGY TRANSFER PATHS OF A LASER ORDNANCE INITIATION SYSTEM. A SOLID STATE LASER SCANNER WITH NO MOVING PARTS WILL ENABLE A MORE COMPACT AND DURABLE LASER ORDNANCE INITIATION SYSTEM. APA OPTICS' SOLID STATE LASER SCANNER UTILIZES INTERGRATED OPTIC WAVEGUIDES OF ALGAAS A ...

    SBIR Phase II 1992 Department of DefenseAir Force
  5. METALORGANIC ATOMIC LAYER EPITAXY FOR YBACUO SIS DETECTOR FABRICATION

    SBC: Apa Optics, Inc.            Topic: N/A

    THIS PROPOSAL DESCRIBES A PHASE I PROGRAM AIMED AT DEVELOPING SUPERCONDUCTOR INSULATOR SUPERCONDUCTOR (SIS) DETECTORS IN THIN FILMS OF YBACUO DEPOSITED ON SRTIO3 SUBSTRATES. WHEN OPERATEDIN THE QUANTUM MODE, OUR PROPOSED HTC BASED SIS DETECTOR CAN POTENTIALLY HAVE A VERY HIGH SENSITIVITY FOR LWIR DETECTION. WE PLAN TO USE AUNIQUE MOCVD BASED ATOMIC LAYER EPITAXY APPROACH. OUR SELECTION OF ATOMIC L ...

    SBIR Phase II 1992 Department of DefenseDefense Advanced Research Projects Agency
  6. VERTICAL CAVITY SURFACE EMITTING LASER MODULES FOR OPTICAL COMMUNICATION AND SIGNAL PROCESSING

    SBC: Apa Optics, Inc.            Topic: N/A

    VERTICAL CAVITY SURFACE EMITTING LASERS ARE UNDER DEVELOPMENT AT SEVERAL U.S. LABS WHICH CONSIST OF A GAAS/ALGAAS QUANTUM WELL FABRY-PEROT CAVITY SANDWICHED BETWEEN N AND P DOPED HIGH REFLECTIVITY SEMICONDUCTOR MIRRORS (GAAS/ALGAAS QUARTER WAVE STACKS). OUR PHASE I RESEARCH PROVES THE FEASIBLITY OF UNIQUE APPROACH TO THE ELECTRIC ADDRESSABILITY OF THESE SURFACE EMITTING LASERS. FOR ADDRESSING A (M ...

    SBIR Phase II 1992 Department of DefenseMissile Defense Agency
  7. A BURIED ELECTRODE MACH ZEHNDER WAVEGUIDE INTENSITY MODULATOR WITH OPERATION SPEEDS IN EXCESS OF 100 GHZ

    SBC: Apa Optics, Inc.            Topic: N/A

    THIS PROPOSAL DESCRIBES AN APA OPTICS PROGRAM TO DEVELOP A HIGH SPEED (100GHZ) GAAS WAVEGUIDE BASED MACH ZEHNDER MODULATOR. OUR APPROACH CENTERS ON THE USE OF A BURIED ELECTRODE CONFIGURATION TO ACHIEVE VELOCITY MATCHING OF THE RF AND OPTICAL SIGNALS. THIS WE FEEL WILL RESULT IN A DEVICE WITH A BROADBAND RESPONSE FROM DC TO 100GHZ. WE WILL WORK IN CONJUNCTION WITH THE ULTRFAST SCIENCE LAB AT THE U ...

    SBIR Phase I 1992 Department of DefenseArmy
  8. AlxGa(1-x)N High Electron Mobility Transistors for High Temperature Applications

    SBC: Apa Optics, Inc.            Topic: N/A

    GaN high electron mobility transistors or HEMTs are proposed for use as high temperature electronic devices. HEMTs are excellent for both power and low noise amplification since they posses a high carrier concentration and an enhanced carrier mobility. GaN has a large bandgap of 3.2 a, which gives it a greater breakdown voltage and a higher saturated electron velocity than GaAs. GaN, in addition, ...

    SBIR Phase I 1992 Department of DefenseNavy
  9. ATOMIC LAYER EPITAXY OF BORON NITRIDE

    SBC: Apa Optics, Inc.            Topic: N/A

    WE PROPOSE A PHASE I RESEARCH PROGRAM AIMED AT DEPOSITING SINGLE CRYSTAL BN FILMS OVER SAPPHIRE AND SILICON CARBIDE SUBSTRATES. OUR PLAN IS TO EMPLOY A UNIQUE PHOTO-ASSISTED SWITCHED ATOMIC LAYER EPITAXY PROCESS. THIS WE FEEL WILL REDUCE THE SINGLE CRYSTAL EPITAXY TEMPERATURE VALUES CLOSE TO 1400C. WE ALSO PROPOSE TO USE A UNIQUE MULTILAYER BUFFERING PROCEDURE TO DECREASE THE INTERFACE DEFECTS RES ...

    SBIR Phase I 1992 Department of DefenseAir Force
  10. GaAs/GaN Strained Layer Superlattice Material for High Temperature Transistors

    SBC: Apa Optics, Inc.            Topic: N/A

    Electronic devices which operate at high temperatures could be used in many military and commercial systems. GaAs and Si based devices cannot operate at these temperatures and require cooling. Wide bandgap material such as diamond, SiC and GaN have greater breakdown voltages, higher operating temperatures, and higher saturated electron velocities than either GaAs or Si. However, these material sys ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
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