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Award Data
The Award database is continually updated throughout the year. As a result, data for FY22 is not expected to be complete until September, 2023.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
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Aerosol Jet Printing of Single-Wall Carbon Nanotube Transistors on Plastic Substrate
SBC: OPTOMEC, INC. Topic: AF09BT26Aerosol Jet printing is proposed as a method for printing large area, CNT-based transistor arrays on flexible substrate. The teaming relationship combines expertise in high resolution printing along with device and materials expertise. All semiconductor, dielectric, and conductive materials comprising the TFTs will be solution processed and printed with a single machine. This will lead to a cos ...
STTR Phase I 2010 Department of DefenseAir Force -
Advanced Computational Methods for Study of Electromagnetic Compatibility
SBC: MATHEMATICAL SYSTEMS & SOLUTIONS INC Topic: AF09BT13The present text proposes development of efficient, accurate and rapidly-convergent algorithms for the simulation of propagation and scattering of electromagnetic fields within and around structures that (i) Consist of complex combinations of penetrable materials as well as perfect and imperfect conductors, and, (ii) Possess complex geometrical characteristics, including open surfaces, metallic c ...
STTR Phase I 2010 Department of DefenseAir Force -
Innovative Combat Simulation to Craft Tomorrow’s UAV Operational Doctrine
SBC: HPS Simulations Topic: AF09BT31Existing computer combat wargames offer a sophisticated and high fidelity base platform for accurately modeling standard combat scenarios. However, the rapid development of UAV capabilities in terms of sizes, weapons, sensors, communications and flight ability is presenting a new challenge for these simulations. At the same time, the general state of world affairs is changing such that the likeli ...
STTR Phase I 2010 Department of DefenseAir Force -
Theoretical Innovations in Combining Analytical, Experimental, and Computational Combustion Stability Analysis
SBC: HYPERCOMP INC Topic: AF09BT38Combustion stability is an important consideration in the design of liquid rocket engines. While fundamental modes of unstable operation in simple geometries are easily identified using analytical methods, recent times have seen these methods greatly expand in scope, applied in semi-numerical format to increasingly complex geometries and flow situations. Much remains to be explored in understandin ...
STTR Phase I 2010 Department of DefenseAir Force -
A Li-Ion Battery Tool for Predicting Life and Performance for Satellite Orbit Operations Scenarios
SBC: Global Aerospace Corporation Topic: MDA08T008The expected life of satellite Li-Ion batteries is determined by many factors, including thermal considerations, electrode chemistries, orbit and mission life, DOD, and pulse power requirements. First-principles battery model literature pertains primarily to orbital cycling at moderate DOD under isothermal conditions without variable power loads. Knowledge must be extended to encompass wider life ...
STTR Phase II 2010 Department of DefenseMissile Defense Agency -
Rapid Combustion Driven High Pressure Powder Compaction of Refractory Alloys and Dispersion Strengthened Composites for High Temperature Applications
SBC: UTRON KINETICS LLC Topic: MDA09T002This Phase I STTR effort will be focused on fabricating and scientifically characterizing Mo/Re (59 Mo-41 Re), and W-25Re alloys with other alloying additions such as small % of dispersion strengthening materials such as zirconia, hafnia, tungsten carbide, Hafnium (Hf), Zirconium, TaC, Hf-based carbides in select geometrical shapes using UTRON Kinetics''s innovative, and cost-effective Combustion ...
STTR Phase I 2010 Department of DefenseMissile Defense Agency -
Scalable technology for growth of high quality single crystal gallium nitride
SBC: Soraa Topic: AF08BT20We propose to demonstrate and advance several key aspects of our novel, scalable ammonothermal technology for growth of high quality single crystal gallium nitride. Specifically, we propose to demonstrate a high growth rate and high crystalline quality, to design and analyze a pilot-scale reactor, and to construct and validate a quantitative model to describe the fluid dynamics of the growth envi ...
STTR Phase II 2010 Department of DefenseAir Force -
Producibility of Gallium Nitride Semiconductor Materials
SBC: Inlustra Technologies LLC Topic: MDA09T001Inlustra Technologies and the University of Notre Dame propose a Phase I STTR program that, combined with a subsequent Phase II effort, will result in methods for the scalable production of semi-insulating non-polar GaN substrates. These substrates will be utilized in the fabrication of high-power/high-frequency AlGaN-GaN electronic devices capable of reliable operation under high thermal load. ...
STTR Phase I 2010 Department of DefenseMissile Defense Agency -
Contamination-free, Ultra-rapid Reactive Chemical Mechanical Polishing (RCMP) of GaN substrates
SBC: Sinmat Inc Topic: MDA09T001Gallium Nitride (GaN) substrates are ideal materials for fabrication of high-power and high-frequency devices based on III-V materials. The current state-of-the-art Chemical Mechanical Polishing (CMP) methods are plagued by several challenges, including, surface charge affects due to surface contamination, and sub-surface damages, which can limit the quality of III-V devices. Furthermore, there is ...
STTR Phase I 2010 Department of DefenseMissile Defense Agency -
Development for Radiation Hardened Advanced Electronic Circuits
SBC: United Silicon Carbide, Inc. Topic: MDA09T006In response to SBIR topic MDA09-T006, USCI proposes to develop the first medium-level integrated circuit for radiation-tolerant applications. The advanced integrated circuit will be demonstrated based on a novel yet simple design SiC transistor that has the potential to provide a factor of 10X improvement in performance comparison to state-of-the-art. The SiC transistor can be fabricated by a subs ...
STTR Phase I 2010 Department of DefenseMissile Defense Agency