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The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

Displaying 196081 - 196090 of 202203 results
  1. InAs/GaInSb Superlattice for Very Long Wavelength Infrared Applications

    SBC: SVT ASSOCIATES INC            Topic: N/A

    GaInSb/InAs superlattices show great promise as materials for use in very long wavelength infrared (VLWIR) detectors. This III-V compound offers advantages over current HgCdTe technology in both anticipated performance level and ancillary support system(e.g. cryogenic cooling) costs. Due to its piezoelectric characteristic, (111)-oriented superlattice lowers the effective bandgap energy when com ...

    SBIR Phase I 2001 Department of DefenseAir Force
  2. InAs/GaInSb Superlattice for Very Long Wavelength Infrared Applications

    SBC: SVT ASSOCIATES INC            Topic: N/A

    GaInSb/InAs superlattices show great promise as materials for use in very long wavelength infrared (VLWIR) detectors. This III-V compound offers advantages over current HgCdTe technology in both anticipated performance level and ancillary support system(e.g. cryogenic cooling) costs. Due to its piezoelectric characteristic, (111)-oriented superlattice lowers the effective bandgap energy when com ...

    SBIR Phase II 2001 Department of DefenseAir Force
  3. Optimized InGaAsSb/GaAs photodiode for high speed detection

    SBC: SVT ASSOCIATES INC            Topic: N/A

    This Small Business Innovation Research Phase I project proposes a new detector material for single mode optical fiber communication over the information highway. High performance detectors are an enabling technology for the moderate to long distanceoptical transmissions at 1300 and 1550 nm wavelengths. However, due to material related problems, detector devices are not yet practical for such opt ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Al(In)GaN/(In)GaN High Electron Mobility Transistors for Low-Noise and High-Power Applications

    SBC: SVT ASSOCIATES INC            Topic: N/A

    AlInGaN-based heterostructures have demonstrated unmatched versatility in optical and electronic applications. In particular, AlGaN/GaN high electron mobility transistors (HEMTs) are the leading candidates for realizing ultra-high frequency, low-noiseand high-power amplifiers. The addition of indium to the composition of these HEMTs is expected to dramatically improve their performance. We prop ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. High Speed VCSEL for 1300 nm Optical Network

    SBC: SVT ASSOCIATES INC            Topic: N/A

    Fiber optical transmission is increasingly applied to computer network, secure telecommunication systems, military aircraft, and even in missile guidance systems. 1300 nm vertical cavity surface-emitting lasers (VCSEL) are becoming a prefered technologyfor transceivers in short- and medium-haul, enterprise and metro data network. There is significant interest in using diluted nitride GaInNAs as ac ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Indium Gallium Arsenide Nitride Quantum Dots for High Speed Infrared Emitters BMDO02-011B

    SBC: SVT ASSOCIATES INC            Topic: N/A

    "The material Indium Gallium Arsenide Nitride (InGaAsN) is a novel compound semiconductor ideally suited for infrared optical devices. This material may be grown on GaAs substrates and can take advantage of mature GaAs processing technology. Quantum dots,a subset of the nanotechnology field, are structures whose physical dimensions are in the range of 10 nanometers, a size on the order of indivi ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  7. InAs/GaInSb Superlattice Detector Development for > 20-Micron Infrared Focal Plane 02-003E

    SBC: SVT ASSOCIATES INC            Topic: N/A

    InAs/GaInSb type II superlattices show great promise for use in Very Very Long Wavelength Infrared (VVLWIR, for wavelength > 20 um) detectors. System analysis indicates early detection of space borne vehicles is more easily achieved in this infraredregime. This III-V compound compares very favorably with the current HgCdTe technology in anticipated performance, manufacturability and operating cos ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  8. Surface Passivation of Gallium Nitride (GaN) Based Devices and Circuits to Reduce Current Slump

    SBC: SVT ASSOCIATES INC            Topic: N/A

    High power AlGa-nitride RF electronics are of great interest to various DoD applications. This proposal will utilize an advanced plasma deposition process to passivate surface traps on the devices, to dramatically reduce surface-related transient effectsand improve the device performance. We will use this technique to produce high quality passivation layers, such that charge traps in the layer can ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  9. Hetero-Junction Pumped Er-Light Emitter for Integrated Optical Communication 02-011A

    SBC: SVT ASSOCIATES INC            Topic: N/A

    SVT Associates proposes an enhanced GaN:Er light emitting diode fabricated on silicon substrate and can be integrated with thin film waveguide, such that light propagation can be manipulated for fast on-chip or chip-to-chip interconnect. A key component ofthe optical communication on a chip is an efficient light source. Since the efficiency of electron impact-induced luminesence of Er is high, it ...

    SBIR Phase I 2002 Department of DefenseMissile Defense Agency
  10. SBIR Phase I: High Sensitivity, Tunable GaN/AlGaN Multiple Quantum Well UV Photodetectors

    SBC: SVT ASSOCIATES INC            Topic: N/A

    This Small Business Innovation Research (SBIR) Phase I project is directed toward the development of highly sensitive, solid-state, solar-blind photodiodes based on the group III-nitride material system, aluminum gallium nitride. Ultraviolet detectors are used in water treatment plants, automated arc-welding systems, and the monitoring of atmospheric ozone depletion. The objective of the proposed ...

    SBIR Phase I 2002 National Science Foundation
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