Award Data

SVT Associates proposes an enhanced GaN:Er light emitting diode fabricated on silicon substrate and can be integrated with thin film waveguide, such that light propagation can be manipulated for fast on-chip or chip-to-chip interconnect. A key component ofthe optical communication on a chip is an efficient light source. Since the efficiency of electron impact-induced luminesence of Er is high, it ...

This Small Business Innovation Research (SBIR) Phase I project is directed toward the development of highly sensitive, solid-state, solar-blind photodiodes based on the group III-nitride material system, aluminum gallium nitride. Ultraviolet detectors are used in water treatment plants, automated arc-welding systems, and the monitoring of atmospheric ozone depletion. The objective of the proposed ...

The wide bandgap material GaN is ideally suited for high power and high temperature electronics. Potential applications include high power devices such as amplifiers, mobile digital, point-to-point and satellite communications, wireless area networking(WAN), high temperature sensor and electronics for combustion control, and electronic actuators. An investigation into the feasibility of the growth ...

Fiber optical transmission is increasingly applied to computer network, secure telecommunication systems, military aircraft, and even in missile guidance systems. 1550 nm vertical cavity surface-emitting lasers (VCSEL) are becoming a preferred technology for transceivers in long-haul, and even enterprise and metro data network. There is significant interest in using diluted nitride InNAsP as activ ...

InP-based devices have applications encompassing the entire communication technology including wireless and fiber-optic telecommunications. It is especially suitable for very high frequency (up to 200GHz) operation. Therefore they are increasingly a critical component in all military missions. Their manufacturing costs are high in large part due the high cost of InP substrates, and their much smal ...

70291 Achieving 0.5 psi accuracy at pressures up to 10,000 psi in geothermal drilling applications will require precision pressure transducing technology. Capacitive pressure transducers would be ideal for both the high accuracy and high temperature stability requirements, but supporting electronics that can also operate a 300oC or higher are lacking. This project will utilize wide band gap ...

Epitaxial growth of non-equilibrium thin-film structures, which have high quality and abrupt interfaces, is still the main challenge that limits many material systems for applications in semiconductor devices. In this STTR Phase II program, SVT Associates (SVTA) in collaboration with the University of Minnesota (UMN) will develop a new RF plasma light-mass ion source, compatible with the low-pres ...

Dramatic differences in the diffusivities of the constituents of novel thin film materials and structures limit material perfection under far from equilibrium growth conditions. We will develop a new light-mass ion source, compatible with the low pressurerequirements of molecular beam epitaxy (MBE), to provide selective enhancement of the motion of surface atoms. Helium or hydrogen ions incident ...

InP-based devices have applications encompassing the entire communication technology including wireless and fiber-optic telecommunications. It is especially suitable for very high frequency (up to 200GHz) operation. Therefore they are increasingly acritical component in all military missions. Their manufacturing costs are high in large part due the high cost of InP substrates, and their much small ...

Organic field effect transistors (OFETs) are gaining rapid attention for their vast technical and commercial potential. Their low cost, low-temperature processing, and compatibility with flexible substrates are key attributes and are especially suitablefor large format electronics manufacturing. Although organic light emitting diodes (OLEDs) are already in production for displays in cell phones an ...