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WE PROPOSE A PHASE I RESEARCH PROGRAM AIMED AT DEPOSITING SINGLE CRYSTAL BN FILMS OVER SAPPHIRE AND SILICON CARBIDE SUBSTRATES. OUR PLAN IS TO EMPLOY A UNIQUE PHOTO-ASSISTED SWITCHED ATOMIC LAYER EPITAXY PROCESS. THIS WE FEEL WILL REDUCE THE SINGLE CRYSTAL EPITAXY TEMPERATURE VALUES CLOSE TO 1400C. WE ALSO PROPOSE TO USE A UNIQUE MULTILAYER BUFFERING PROCEDURE TO DECREASE THE INTERFACE DEFECTS RES ...

We propose the exploration of single crystal GaN waveguides for the fabrication of optoelectronic integrated circuits. The feasibility of using GaN for short wavelength (up to 365 nm) OEIC's will be established in Phase I via the demonstration of a channel waveguide based phase shifter. The Al(sub x)GA(sub 1-x)N material system with its transparency from 365 nm to 12 microns, tunable refractive in ...

We propose to demonstrate the feasibility of fabricating a phototransistor using the A1xGa1-xN material system. The proposed phototransitor is based on a GaN-A1xGa1-xN heterojunction which exhibits a 2-D electron gas conduction when a bias is applied on the source-drain terminals. The device is maintained in a nominally OFF state by applying a reverse bias voltage on the gate terminal. With optica ...

We propose a unique GaN-Al(sub x)Ga(sub 1-x)N heterojunction based CCD for imaging in the ultraviolet (wavelengths less than 365 nm). Our proposed device will be solid state, TTL compatible and in it's final configuration solar blind. The Phase I program is aimed at establishing the technical feasibility of our device concept. Our proposed CCD is in essence a GaN-AlGaN gated photoconductor with ...

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THE KEY PROBLEM TO BE ADDRESSED IN PHASE I OF THIS PROJECT WILL BE TO DETERMINE THE FEASIBILITY OF A NOVEL POSITION MEASURING SYSTEM FOR A FAMILY OF COMPUTER CONTROLLED MACHINE TOOLS. THE MULTIPLE LASER MEASUREMENT SYSTEM (MLMS), WHICH FORMS THE BASIS OF THIS PROPOSAL, WILL MEASURE THE (X, Y, Z) POSITION OF THE CUTTING HEAD DIRECTLY AT RATES AND ACCURACIES SUFFICIENT FOR CLOSED LOOP POSITION CONTR ...