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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. A TEM-Based Thermal and Electronic Imaging System

    SBC: NANOELECTRONIC IMAGING, INC.            Topic: DMEA192001

    The transmission electron microscope (TEM) is the standard high resolution tool for imaging microelectronics. Despite its impressive sensitivity to physical structure (the type, number, and arrangement of atoms), TEM is remarkably inept at detecting electronic and thermal signals, even when equipped with expensive spectroscopic attachments. Electronic and thermal structure determines device functi ...

    SBIR Phase II 2021 Department of DefenseDefense Microelectronics Activity
  2. Machine Learning Applied to Counterfeit Detection

    SBC: GRAF RESEARCH CORPORATION            Topic: DMEA192002

    The machine learning for counterfeit detection research program continues the successful Phase 1 feasibility study of applying machine learning to detect FPGA counterfeits. In Phase 1, Graf Research demonstrated the feasibility of implementing a machine learning based counterfeit detection platform for a single FPGA device and representing data characteristic of repackaged counterfeit devices.  T ...

    SBIR Phase II 2021 Department of DefenseDefense Microelectronics Activity
  3. Highly-Integrated SiC BiCMOS/Power Device Technology: Design, Modeling, and Reliability Metrics

    SBC: COOLCAD ELECTRONICS, LLC            Topic: DMEA211001

    We propose to lay the groundwork for the implementation of a completely integrated SiC BiCMOS/LDMOS technology for integrated control/power circuit applications reliable for operation up to 300 C. Our workplan to accomplish this goal comprises improving device speed and reliability by device engineering, establishing baseline reliability and qualification tests to support and certify development, ...

    SBIR Phase I 2021 Department of DefenseDefense Microelectronics Activity
  4. Manufacturing Platform for High-Temperature CMOS ICs on SiC

    SBC: NOMIS POWER CORPORATION            Topic: DMEA211001

         This project aims to develop high-temperature (> 300°C) operational dielectrics for SiC CMOS integrated circuits (ICs) technologies in a production-grade fabrication facility in the U.S. All outcomes of this project will directly benefit future implementations of various kinds of high-temperature electronics for defense applications.Increasingly, the development of SiC CMOS-based ICs tha ...

    SBIR Phase I 2021 Department of DefenseDefense Microelectronics Activity
  5. 4H-SiC BiCMOS Development on 6” wafers in a High-Volume Production Foundry

    SBC: GENESIC SEMICONDUCTOR INC.            Topic: DMEA211001

    GeneSiC Semiconductor is leveraging recently reported novel techniques for high-performance 4H-silicon carbide MOSFETs, deep in-house expertise in SiC device design and robust device manufacturing facilities at automotive-qualified production foundry X-Fab Texas, for the development of a comprehensive 4H-SiC BiCMOS process platform in this DMEA SBIR program for mission-critical DoD applications an ...

    SBIR Phase I 2021 Department of DefenseDefense Microelectronics Activity
  6. Robotic Microelectronic Planar Serial Sectioning System (21-RD-282)

    SBC: UES INC            Topic: DMEA211002

    Due to ongoing reduction in feature dimensions and an increase in structure complexity, device delayering is becoming more and more important in detecting electrical faults as well as other phenomena that contribute to device failure. Damage-free de-processing of single layers is critical, but can also be too time consuming to execute manually for various industrial and R&D applications. Automated ...

    SBIR Phase I 2021 Department of DefenseDefense Microelectronics Activity
  7. Intelligent Automatic Serial Sectioning using Ultra Short Pulse Laser Polygon Scanning

    SBC: AEROCYONICS, INC.            Topic: DMEA211002

    Serial sectioning of microelectronics, as needed for performing destructive, high-resolution reverse engineering and   failure analysis, faces several challenges, due to the ever-growing miniaturization of features of interest. Some of these challenges are as follows: (1) Current methods of delayering require access to multiple pieces of mechanical equipment such as semi-automated polishing mach ...

    SBIR Phase I 2021 Department of DefenseDefense Microelectronics Activity
  8. Graphenated Carbon Nanotube Based MEMS Supercapacitors

    SBC: Faraday Technology, Inc.            Topic: DMEA21A001

    The inherent advantages of MEMS technology, including small size and cost-effective fabrication, make it ideal for numerous application in a wide range of industries ranging from defense, automotive, medical, to consumer industries. For applications that require self-powered MEMS electronics, an integrated energy storage device is required. Due to their small size, excellent cycle life and high po ...

    STTR Phase I 2021 Department of DefenseDefense Microelectronics Activity
  9. Integrated Micro-Supercapacitors via Laser Induced Graphene from Photoresist

    SBC: CORNERSTONE RESEARCH GROUP INC            Topic: DMEA21A001

    While supercapacitors have been demonstrated for decades, the biggest challenge is to develop a reliable fabrication strategy which can integrate these devices with current CMOS (complementary metal oxide semiconductor) technology. Current fabrication technologies do not have good compatibility with other electronic components or cannot manufacture the supercapacitor in a small form factor. Conseq ...

    STTR Phase I 2021 Department of DefenseDefense Microelectronics Activity
  10. High-performance Zinc-ion hybrid MEMS supercapacitors with high energy density

    SBC: ATSP Innovations, Inc.            Topic: DMEA21A001

    In energy harvesting applications, consumer electronics, and other power-demanding industrial sectors, energy storage with high power and energy efficiency along with long cycling life are key demands. The goal of this project is to fabricate an innovative MEMS-based hybrid supercapacitor with energy density > 100 µWh/cm2 (one of the greatest values reported for micro-supercapacitors), high poten ...

    STTR Phase I 2021 Department of DefenseDefense Microelectronics Activity
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