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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. GAN UV/BLUE SOLID STATE LASER

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Efficient blue and UV lasers are key to high density optical storage, novel communication systems, industrial and medical lasers, and specialized spectroscopic tools. By virtue of their direct bandgap (ranging from 2.09eV-InN to 3.44eV-GaN to 6.2eV-AlN) and lattice-matched heterostructure system, the III-V nitride-based semiconductors have the greatest potential to enable devices that will meet th ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  2. BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    We propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-P ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  3. HIGH POWER MOS TRANSISTOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The ability to control large amounts of power (1-150kW) is necessary in applications ranging from aerospace to consumer electronics to industrial power systems and transportation. In order for silicon and gallium arsenide devices to meets such high power densities, tens of devices must be combined to meet the voltage and current requirements. Power combining networks, extra heatsinking and sophist ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  4. Superconductor Magnetic Memory

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE DEVELOPMENT OF A DENSE, FAST SUPERCONDUCTING MEMORY TECHNOLOGY WILL FACILITATE THE INTEGRATION OF SUPERCONDUCTING ELECTRONICS INTO SPACE AND ELECTONIC WARFARE SYSTEMS. A SUPERCONDUCTOR BASED MAGNETIC MEMORY TECHNOLOGY IS PROPOSED WHICH CAN BE USED TO FABRICATE MULTIMEGABIT SUPERCONDUCTOR MEMORIES WITHOUT REQUIRING LARGE SCALE INTEGRATION OF JOSPEHSON JUNCTIONS. THIS MEMORY WELL SUITED FOR HIGH ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  5. Efficient Dopant Activation In P-type III-V Nitrides

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE AVAILABILITY OF EFFICIENT BLUE LIGHT EMITTERS WOULD BREAK OPEN COMMERCIAL AND DEFENSE MARKETS IN FULL COLOR DISPLAYS AND HIGH DENSITY OPTICAL STORAGE SYSTEMS. NITRIDE-BASED DEVICES HAVE THE GREATEST POTENTIAL AS HIGH EFFICIENCY EMITTERS BECAUSE OF THEIR DIRECT BANDGAP AND CONVENIENT HETEROSTRUCTURES SYSTEM. HOWEVER, THE LACK OF OF SUITABLE P-TYPE DOPING TECHNOLOGY HAS GREATLY HINDERED DEVELOPM ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  6. Chemical Vapor Deposition of Beta-BaB2O4 (BBO) for Integrated Nonlinear Optics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The superior optical properties of BBO and its applicability in frequency doublers and waveguides justifies development of thin film deposition processes which can be integrated with microelectronic processing. The high damage threshold of BBO, a necessary component for device integrity, is a major advantage over other nonlinear optic materials. In Phase I, chemical precursors and a deposition pro ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  7. Multi-Spectral Semiconductor Ultraviolet Detector

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    We propose to demonstrate the feasibility of solar-blind, multi-spectral III-V nitride UV detectors which can meet the requirements of applications in both the military and commercial sectors (missile threat warning, UV search and track, environmental monitoring in gas turbines, and general flame detection). A novel aspect of our approach is the use of SiC as a substrate for these devices, which w ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  8. Gas-Phase Deposition of Low Dielectric Polymers

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Phase I will develop a gas-phase process for the deposition of low dielectric constant polymers for use in integrated circuits. This process will utilize the firm's liquid delivery technology to deliver the reactants and grow films at high deposition rates. Polymerization will be induced by thermal activation on a heated substrate. This novel approach to polymeric film growth enables the depositio ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  9. Radiation Tolerant Memory Device Materials

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Radiation hardened ferroelectric random access memory (FRAM) devices have potential uses in numerous military applications. Until recently, FRAMs have relied on lead zirconate titanate (PZT) as the storage material. However, a new class of materials promises to offer higher device reliability and easier integration into existing technologies. SrBi2Ta209 has been identified as a material of choice ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  10. Lattice Matched III-V Nitride Heterostructures

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The III-V nitrides have recently emerged as the primary material system for UV/blue light emitters. Higher bandgap energy (Al,Ga)N alloys are currently employed as cladding layers for GaN and (In,Ga)N active region LEDs and laser structures. Lattice mismatch between the cladding and active regions, however, restricts both the thickness and composition of the layers which in turn limits the operati ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
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