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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Fiber-Optic Raman Analysis for Composites and Solid Rocket Motors

    SBC: PROCESS INSTRUMENTS, INC.            Topic: N/A

    We propose developing a compact, optical fiber-based Raman scattering instrument for rapid, in-situ analysis of composites, solid rocket motors, and propellants. The instrument will incorporate diode laser-based, full-spectrum Raman scattering forcontinuous in-situ remote monitoring of the composite and propellant chemistry. Narrow well defined Raman peaks and lack of sample preparation requirem ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  2. Hydride Vapor Phase Epitaxy For Ga(In)N/AlGaN Quantum-Well Structures

    SBC: TECHNOLOGIES & DEVICES INTERNATIONAL,            Topic: N/A

    We propose to develop hydride vapor phase epitaxy (HVPE) to fabricate multi-layer epitaxial structures for advanced GaN-based devices with quantum wells. Currently, only metal organic chemical vapor deposition is employed to fabricate production GaN-baseddevices including ligh emitters and high-power microwave devices. Another epitaxial method known to deposit high quality GaN layers is the HVPE ...

    SBIR Phase II 2001 Department of DefenseMissile Defense Agency
  3. Novel Approach for AIN Boule Growth

    SBC: TECHNOLOGIES & DEVICES INTERNATIONAL,            Topic: N/A

    TDI proposes to develop aluminum nitride bulk growth technique based on a new version of hydride vapor phase epitaxial (HVPE) method. The HVPE technique is a well-established, relatively cheap method to grow thick layers of GaN on sapphire and siliconcarbide substrates. Our recent experiments showed that AIN thick epitaxial layers can be grown by HVPE. The goal of Phase II project is to develop ...

    SBIR Phase II 2001 Department of DefenseMissile Defense Agency
  4. SiC Epi-Wafers for Large Area High Power Diodes

    SBC: TECHNOLOGIES & DEVICES INTERNATIONAL,            Topic: N/A

    TDI proposes to develop novel epitaxial technique for high-power large area SiC diodes. Recently TDI has reported silicon carbide pn structures grown by sublimation and liquid phase epitaxy and demonstrated building blocks for SiC power devices includinglow resistivity Ohmic contacts to p-SiC, 4H-SiC pn diode chips with breakdown field > 2MV/cm and low leakage current. 6H-SiC diode chips with sta ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  5. Growth Technology for Semi Insulating GaN Substrate Materials

    SBC: TECHNOLOGIES & DEVICES INTERNATIONAL,            Topic: N/A

    TDI proposes to develop semi insulating GaN substrate materials using novel vapor phase growth approach. Our recent experiments show that GaN epitaxial layers having a specific resistivity of 10e12 Ohm cm at 300 K and 109 Ohm cm at 500 K can be grown byhydride vapor phase epitaxy (HVPE). The HVPE technique is a well-established, relatively cheap method to grow thick layers of GaN on sapphire and ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Innovative Processing of HfC Coating using Hf-Containing Polymers

    SBC: WELD STAR TECHNOLOGY, INC.            Topic: N/A

    Refractory metal carbide coatings are important in high temperature applications by offering corrosion protection of the high temperature components. Traditional methods of producing such coatings are expensive and complex. A low temperature polymericbased process to fabricate HfC with low oxygen impurity and high yield is now ready for assessment for coating applications. The attributes of thi ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Gain, Power, and Duty Enhancement for the Far-Infrared p-Ge Laser by Neturon Transmutation Doping

    SBC: Zaubertek, Inc.            Topic: N/A

    This Small Business Innovation Research Program will realize substantial improvements in the p-Ge laser gain medium. Far-infrared lasers based on inter-sub-band transitions of holes in p-type Ge span the broad spectral range of 1-4 THz and are the onlysolid state lasers in that region. They hold promise for molecular spectroscopy, chemical sensing, secure free-space local-area communications in ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Low Cost Fabrication Technology For Novel AlB2 Flake/Aluminum MMCs

    SBC: Ceramic Composites, Inc.            Topic: N/A

    Substantial improvements in weight reduction, strength, modulus and wear resistance are essential in meeting the design criteria for the next generation of aircraft, spacecraft, and missiles. CCI proposes the development of a one step, low-costfabrication process for a novel AlB2 in-situ reinforced, Al metal matrix composite MMC. The research outlined in the phase I proposal will demonstrate tha ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  9. Light Weight Integrated Injector/Thruster for Divert Propulsion

    SBC: Ceramic Composites, Inc.            Topic: N/A

    The next generation of rocket propulsion thrusters will be required to be lighter, and provide higher thrusts with no increase in the cost of manufacturing. The fabrication of a very light weight propulsion systems is proposed through the integration of alight weight ceramic injector with a ceramic matrix composite nozzle. This approach will reduce the mass of the system by over 50%. The inject ...

    SBIR Phase I 2001 Department of DefenseMissile Defense Agency
  10. Advanced Cooling System for High Power Solid State Lasers

    SBC: RINI TECHNOLOGIES INC            Topic: N/A

    Through the Phase I SBIR process, Rini Technologies Inc. has demonstrated the feasibility of using evaporative spray cooling to reduce the temperature of high power laser diode stacks below the temperature at which they currently operate. This reductionin temperature, while operating at high power, results in increased laser efficiency, extended lifetime and reliability, as well as the ability to ...

    SBIR Phase II 2001 Department of DefenseMissile Defense Agency

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